tcr

The analysis and simulation of TCR reactive power compensation system

TCR无功补偿系统仿真分析

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After TCR/ CD3 complex cross-linking MHC/ peptide, LFA-1, expressed on T cell increases a higher affinity and avidity for ICAM-1 rapidly. LFA-1 is a key molecule in formation of the immune synapse.

T细胞表面LFA1对ICAM1的亲和力及亲合力在TCR/CD3交联MHC/抗原肽后迅速上调，并参与T细胞免疫突触的形成。

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In TCR/ InsHEL Aire-/-mice, due to lack of Aire, self reactive T cells deletion was blocked.

在TCR/InsHEL Aire-/-鼠，由于缺少Aire，自身反应性T细胞的阴性选择完全被抑制。

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For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance ( TCR).

与低氮含量Cr Si Ni N薄膜相比，高氮含量Cr Si Ni N薄膜的电阻值在热处理过程中变化较小、欲获得较小电阻温度系数（TCR）需要更高的退火温度。

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Alloantigen specific TCR transgenic CD8~+ T cells require IL-2 to mediate allograft rejection

移植抗原特异性转基因CD8~+T细胞对白细胞介素2的依赖性

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After annealing at 750 ℃ for 3 min in N2, the thermal coefficient of resistance ( TCR) of the IBED film reached 4.07%.

750℃氮气退火后，薄膜的热电阻温度系数高达4.07%。

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Among familiar compensators , Thyristor controlled reactor ( TCR ) is suitable for compensating the arc furnace.

晶闸管控制电抗器 ( TCR ) 以较好的解决电弧炉的无功补偿问题.

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The temperature coefficient of resistance ( TCR) of these samples have been studied.

多晶材料，研究了它们的电阻温度系数（TCR）。

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From resistance-temperature ( R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance ( TCR) of the films are increased after annealing.

电阻温度特性测试表明，退火后薄膜的电阻（R）和电阻温度系数（TCR）都明显增大。

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Combined with the TCR+ FC compensation plan, the method realizes the goal that power factor of the power supply system is above 0.9 under shock load.

此方法结合TCR+FC的补偿方案，成功实现了该供电系统在冲击性负荷下功率因数大于0.9的目标。

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Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.

通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。

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Loss Analysis of TCR Valve under High Voltage Test Mode

TCR阀高电压试验方式中的损耗分析

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An investigation of High TCR thin film temperature sensor

高TCR薄膜温度传感器的研究

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C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.

根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。

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In the MND group, the latency of positive and negative waves of TCR ( P20/ N30) was markedly longer than that in the normal control group, and the difference was significant.

运动神经元病组三叉神经-颈反射正波/负波的峰潜伏期（P20/N30）明显高于正常对照组，差异有显著性。

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A case of highly reactive hyperplasia of lymph tissue was found to be positive for TCR β gene rearrangement analysis.

1例高度反应性增生病例TCRβ基因重排检测阳性，2例低分化癌和2例淋巴组织高度反应性增生均为阴性。

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The influence of the dose of graphite and the content of alcohol on thermal contact resistance ( TCR) was studied.

从理论上分析了隔离剂对接触热导的影响，并通过实验研究了接触热导随喷涂量和表面活性剂乙醇添加量的变化规律。

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Colonal TCR γ gene rearrangement was detected in 5 cases.

5例标本TCRγ基因重排阳性。

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Application of TCR SVC on the Wind Power Network

TCR型SVC在风电并网领域中的应用

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Surface antigen showed that CD + 8 cell was larger than 73.8 % CTR � � δ was 43.8 %.

抗原表型中73.8%以上表达CD8分子,TCRγδ为43.8%.

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Results show that the TCR of VOx films was increased, and the sheet resistance was reduced effectively both by Mo-doping and W-doping.

结果表明，Mo原子和W原子掺杂均可有效地降低氧化钒薄膜室温方阻，并且提高薄膜的室温TCR。

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At present, most of the thyristor-controlled reactor ( TCR) type static var compensators ( SVCs) use open-loop control mode as compensation for the three-phase unbalanced load device.

在总结已有的研究成果基础之上，将瞬时无功功率理论应用于提高功率因数和补偿三相不平衡负荷的静止无功功率补偿器控制之中。

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Develop the metal film resistors which have stable electrical properties, wide resistance range, smaller TCR, can adapt to harsh environment is an important thing and have broad application prospects.

研制具有稳定的电性能，宽阻值范围、较小的电阻温度系数、能适应苛刻环境的金属薄膜电阻有着广泛的应用前景和重要意义。

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Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR).

氧化钒薄膜由于具有高电阻温度系数（TCR），近年来被广泛应用于非制冷红外探测及红外成像领域。

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As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.

氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。

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This paper introduces the basic principle and method of computer simulation for reactive power compensation by giving an example of simulation on DC load of thyristor rectifier device, at the same time, introduces the basic principle and formula of FC+ TCR circuit.

该文通过最基本的晶闸管整流装置控制的直流负载的仿真，来介绍仿真技术的基本原理，基本方法，同时介绍了FC+TCR电路的基本原理和公式。

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Parameter Selection of Phase-controlled Reactor in TCR Type SVC

TCR型SVC相控电抗器参数选择

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Methods The mouse involved in TCR-STV-MHC termolecular complex test were randomized into normal pressure tumour vaccine group, high pressure oxygen tumour vaccine group, control group. To observe it inducing lymphocyte killing activeness in vitro.

方法随机分为常压瘤苗组、高压氧瘤苗组和对照组，采用高温固化瘤苗免疫对小鼠进行动物实验，通过TCR STV MHC三分子复合体实验，观察其在体外诱导淋巴细胞杀伤活性；

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The Ig and TCR gene rearrangements during early lymphoid differentiation generally follow a hierarchical order.

在早期淋巴细胞的分化过程中,免疫球蛋白和TCR基因的重排一般遵循种系发育规律.

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The job of TCR-CD 3 is to assist in the recognition of these antigens.

而TCR -CD3 的工作则是协助识别这些抗原.

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