An investigation of High TCR thin film temperature sensor

1、

Thin-film sensor for two kinds of gases

双敏薄膜气体传感器的研究

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2、

Design of a Humidity Controller Using Thin Film Humidity Sensor

使用薄膜湿敏元件的湿度控制器的设计

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3、

By studying the sensitivity of Pt-DEB thin film sensor to methane gas CH4, the film sensors was hard to return to initial frequency after the absorption of CH4. And the sensitivity to CH4 with different concentration presented a character of nonlinear.

研究表明Pt-DEB薄膜QCM传感器在室温下对于瓦斯气体CH4的敏感特性，发现对CH4气体发生吸附过程后，很难回到初始频率，并且对不同浓度的瓦斯气体响应灵敏度呈非线性。

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4、

The thin film sensor with rapid detection, few sample solution and broad measuring dynamic range, increases sensitivity for its potentiometric signal is transformed to alternating-current signal agitated by light to measure.

该传感器具有测量快速灵活、所需样品少、动态范围宽等特点，因为把电位信号转化为对光激发的交流电流信号进行测量，所以提高了灵敏度。

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5、

In the end, this thesis comes up wth problems discovered in the test and look forward to the prospect of thin film sensor.

最后提出了实验中发现的问题，并对薄膜传感器的发展做出了展望。

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6、

A Novel Mercury Ion Selective Thin Film Sensor

一种新型汞离子选择薄膜传感器

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7、

Development of a Cryogenic Carbon Thin Film Sensor

碳膜低温传感器的研制

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8、

Thin film sensor application in smart bearing

智能轴承用薄膜传感器

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9、

The thin film sensor shows good repetition and stability in 3 weeks.

该薄膜传感器在3星期内显示了良好的重复性和稳定性；

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10、

CdS thin film, as N-type semiconductor layer and window layer in solar cell, its quality would directly affect the absorption layer which is prepared on the basis of it and is very important to the efficiency and lifetime of the batteries.

CdS在太阳电池中作为N型半导体层和窗口层，其质量将直接影响在此基础上制备的吸收层薄膜质量的好坏，对电池的效率和寿命是非常重要的。

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11、

Growth for Thin Film Of Organic Semiconductor Pentacene

有机半导体材料并五苯薄膜的生长

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12、

Integration of ferroelectric thin film and semiconductor creates a new generation of non volatile memories. The ferroelectric non volatile memories have some advantages over the classical semiconductor memorizers, and they are the ideal memory chip for IC card.

铁电薄膜与半导体集成产生了新一代非易失存储器，与传统的半导体非易失存储器比较具有突出的优点，是新一代IC卡的理想存储芯片。

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13、

Recent studies on ferroelectric thin film/ semiconductor heterostructure are discussed in this paper.

综述了铁电薄膜/半导体异质结构研究近年来的新进展。

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14、

Research Progress in Ferroelectric Thin Film/ Semiconductor Heterostructure

铁电薄膜/半导体异质结构的研究进展

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15、

The I-U characteristic of metal-organic thin film-semiconductor

金属-有机薄膜-半导体的伏安特性

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16、

Measurement of Refractive Index of Thin Film on Semiconductor Substrate

半导体衬底上薄膜折射率的测量

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17、

Electrochemical technique for investigating thin film rust preventive oil

研究薄层防锈油的电化学技术

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18、

We must increase the transmission of the o light and the e light at the same time when we design the AR thin film of the Wollaston prism, which is different with the normal AR thin film.

Wollaston棱镜增透膜的设计要兼顾o光e光同时增透，这是和一般基体增透膜设计的不同之处。

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19、

N this paper, a method for measuring the parameters of the absorbing thin film waveguide by prism coupling is introduced, which can determine the refractive index and thickness of waveguide by measuring the position of absorbing line of reflected light spot from prism.

介绍了一种用棱镜耦合法测量吸收性薄膜波导参数的一种方法，它是由测得棱镜底部反射光斑中模的吸收线位置来确定薄膜的折射率和厚度。

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20、

Introduction of Filter Effect of Thin Film Interference in College Physics Teaching

在大学物理教学中介绍薄膜干涉的滤波效应

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