MOS

Analysis for Analytic Model of the Threshold Voltage of TF SOI MOS Devices

薄膜SOI MOS器件阈值电压的解析模型分析

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New realization of neural networks is presented by using MOS transistors in current mode domain.

本文提出了采用MOS晶体管 的电流型模拟电子神经网络的新实现.

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This paper proposes a new technique to automatically generate STACK layout for MOS analog cell circuits.

提出了一种新的MOS模拟单元电路的STACK版图 自动生成方法.

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A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor ( TMCT ) is presented.

报道了一种新结构的功率栅控晶闸管,称其为槽栅MOS控制的晶闸管 ( TMCT ) .

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A new method for determination of electrical parameters in Silicon chip and MOS properties by the constant current transient technique is described.

本文提出了利用恒流瞬态技术测量硅片电学参数及MOS特性的新方法。

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A low-voltage ferrite driver IC with power MOS transistors is presented.

介绍了一种集成低压铁氧体驱动器和功率MOS管 的单片集成电路.

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A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.

提出了应用于毫米波段的MOS变容管的建模方法.

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Extreme-pressure ( EP ) properties 、 anti-wear ( AW ) and friction-reducing properties of mono-dispersed micro-spherical MoS _ 2 ( MS-MoS _ 2 )

当MS-MoS _2和 CC -MoS_ 2在LP中 的添加浓度分别为各自的最佳添加量0.25%和0.5% ( 质量分数 ) 、载荷为400N时,其摩擦系数较 纯 LP分别 降低了 46.9% 和6.3%,磨损 体积 分别降低了 52.1% 和12.0%.

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Study on Electronic Property of "Bird's Beak" in MOS Device

MOS器件鸟嘴区电学特性研究

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Design of Low Voltage Four quadrant Analogue Multiplier Using Neuron MOS Transistor

采用神经MOS晶体管的低压四象限模拟乘法器的设计

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Dey is de shiflesses, mos'ungrateful passel of no-counts livin '.

俺说过多回了,他们全是懒虫, 不识好歹.

飘（部分）

Breakdown Voltage and Termination Considerations for MOS Power Devices

MOS型硅功率器件的耐压与终端处理

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And the result of MOS capacitance test show that induced charge injection can also induce phase transition of vanadium dioxide.

通过测试结果分析发现通过感应电荷注入也可以诱导二氧化钒薄膜发生相变。

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Study on MOS Hall Sensor Array

MOS霍尔传感器阵列

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The company has advanced MOS integrated circuit.

公司拥有先进的MOS集成电路.

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This paper presents a digital temperature and humidity tester with a linear thermistor and a Ta 2O 5& MOS humidity capacitor as sensors, and a 8098 single chip computer as the processor.

本文介绍了以线性热敏电阻和Ta2O5&MOS型湿敏电容为敏感器件，以8098单片机为核心的一种数字式温湿度测试仪。

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It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

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At the though I felt in my pocket for the mos.

想到这儿,我不禁伸手摸了摸怀里的馍.

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The MOS dynamic shift regisers do not consist of flip-flops , but of inverters.

MOS动态移位寄存器不是用 触发器组成, 而是用反相器组成.

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2240 bits MOS ROM is used as character generator.

2240位MOS ROM用作字符发生器。

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Tribological Behavior of MoS 2 Nanoparticle LB Films on Different Metal Substrate

不同金属基体上MoS2纳米微粒LB膜摩擦学行为研究

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Wu Kai Sha Station will be the northern terminus of MOS Rail.

乌溪沙站是马铁的北行终点站,位于利安?

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Characteristics Analysis and Computer Simulation of Optically Triggered MOS-Gate Solid-State Relay

光控MOS栅固态继电器的电路分析与模拟

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A rail-to-rail input range transconductor implemented by MOS transistors linear region characters is presented.

介绍了一种利用MOS管线性区特性实现满摆幅输入的跨导器。

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N-channel enhancement mode vertical D-MOS transistor.

N沟道增强型垂直D -MOS 晶体管.

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The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage, sub-threshold slope and saturation driving current severely. So, it's a very important factor for good device characteristics to optimize the thin film thickness.

仿真结果显示硅膜厚度对SOI槽栅MOS器件的阈值电压、亚阈值特性和饱和驱动能力都有较大影响，选择最佳的硅膜厚度是获得较好的器件特性的重要因素。

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An efficient algorithm of test pattern generation for MOS circuits with incomplete scan structure

一个有效的不完全Scan结构MOS电路的测试生成算法

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Prof. of Electrical Engineering : Kiss is N-type, the latch-up phenomenon in MOS.

电机教授: 接吻是一种N型金属氧化物半导体间的闭锁(锁存;闩锁;锁上)现象.

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Hot-carrier effect is a major reliability failure mechanism of MOS devices and circuits.

热载流子效应是影响MOS器件与电路可靠性的主要因素.

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Negative bias temperature instability ( NBTI) effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices.

在PMOSFET上施加负栅压和高温应力后，出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。

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