MOS的例句大全

An efficient algorithm of test pattern generation for MOS circuits with incomplete scan structure

一个有效的不完全Scan结构MOS电路的测试生成算法

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Negative Bias Temperature Instability in MOS Structures at Low Temperature

MOS结构低温负偏压温度不稳定性

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Negative bias temperature instability ( NBTI) effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices.

在PMOSFET上施加负栅压和高温应力后，出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。

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This paper presents a digital temperature and humidity tester with a linear thermistor and a Ta 2O 5& MOS humidity capacitor as sensors, and a 8098 single chip computer as the processor.

本文介绍了以线性热敏电阻和Ta2O5&MOS型湿敏电容为敏感器件，以8098单片机为核心的一种数字式温湿度测试仪。

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Breakdown Voltage and Termination Considerations for MOS Power Devices

MOS型硅功率器件的耐压与终端处理

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And the result of MOS capacitance test show that induced charge injection can also induce phase transition of vanadium dioxide.

通过测试结果分析发现通过感应电荷注入也可以诱导二氧化钒薄膜发生相变。

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Study on Electronic Property of "Bird's Beak" in MOS Device

MOS器件鸟嘴区电学特性研究

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The calculated results by density-functional theory ( DFT) proved that different substituents influenced the thermodynamic energy, molecular configuration and MOs orbitals of univalent porphyrin zinc species and the stability changed consequently.

利用密度泛函理论的计算结果证明不同的取代基影响了正一价锌卟啉的热力学能、分子结构及分子轨道，其稳定性随之也发生了变化。

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A novel grease additive derivative of thiadiazole was synthesized. Some Problems about MoS_2 as Oil or Grease Additive

合成了一种新型润滑脂添加剂噻二唑衍生物。二硫化钼作为油脂添加剂的几个问题

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Study on high electric field annealing effect in thin gate oxide of MOS structure

MOS结构中薄栅氧化层高场退火效应的研究

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High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated.

深入研究了MOS结构中薄栅氧化层在高电场下的退火效应，对氧化层陷阱电荷的退陷阱机理进行了深入探讨。

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The synthesize speech which is put out come by low bits rate wideband coding can reach MOS 3.5 by audition test. That indicate the quality of synthesize speech can achieve scheduled request.

经过两种低速率的宽带语音编码输出的广西大学硕士研究生学位论文合成语音，通过听力测试MOS可达到3.5左右，表明合成语音的质量达到预定的要求。

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MOS transistors can be made using this kind of SiO2 film as the gate.

以此SiO2薄膜作为栅，成功地制出了MOS场效应晶体管。

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The MOS structure was prepared with as-grown SiO_xN_y film as the gate dielectric, and its electrical properties such as dielectric content, breakdown field and leakage current were investigated by the C-V method.

利用所制备的SiO xN y薄膜作为栅介质层制作了MOS结构，并研究了SiO xN y薄膜的介电常数、击穿电场强度和泄漏电流等电学特性。

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An effective way to reduce the leakage power is by means of multithreshold CMOS technique, which can restrain the leakage current by adding a MOS transistor to low threshold circuit.

多阈值CMOS技术是一种降低电路漏电流功耗的有效方法.它通过接入高阈值MOS管来抑制低阈值模块的漏电流。

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Threshold shift of MOS devices is the main damage caused by total dose radiation effect.

阈值电压漂移是电离辐照总剂量效应对MOS器件产生的主要损伤。

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Through numerical calculation, the relationship between threshold shift of MOS devices and total dose of radiation effect is established, and also verified through simulation by ISE software.

通过数值推导，建立MOS器件电离辐照效应阈值电压漂移量与辐照总剂量之间关系模型，并利用ISE软件模拟仿真辐照过程，对模型进行验证。

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The threshold voltage is one of the most crucial parameter of MOS device.

阈值电压是表征MOS型器件性能的关键参数之一。

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Algorithms Analysis and Improvement of MOS VLSI Switch-Level Timing Analysis

MOS VLSI时延分析算法的分析和改进

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This paper studied the effect on decompound of MoS_2 which is caused by the lanthanon that appended in iron based powder metallurgical material.

通过实验研究了添加到铁基粉末冶金摩擦材料中的稀土在材料中存在的位置和状态以及稀土对MoS2分解所产生的影响。

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