MOS的例句大全

Extreme-pressure ( EP ) properties 、 anti-wear ( AW ) and friction-reducing properties of mono-dispersed micro-spherical MoS _ 2 ( MS-MoS _ 2 )

当MS-MoS _2和 CC -MoS_ 2在LP中 的添加浓度分别为各自的最佳添加量0.25%和0.5% ( 质量分数 ) 、载荷为400N时,其摩擦系数较 纯 LP分别 降低了 46.9% 和6.3%,磨损 体积 分别降低了 52.1% 和12.0%.

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N-channel enhancement mode vertical D-MOS transistor.

N沟道增强型垂直D -MOS 晶体管.

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It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

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Wu Kai Sha Station will be the northern terminus of MOS Rail.

乌溪沙站是马铁的北行终点站,位于利安?

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At the though I felt in my pocket for the mos.

想到这儿,我不禁伸手摸了摸怀里的馍.

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New realization of neural networks is presented by using MOS transistors in current mode domain.

本文提出了采用MOS晶体管 的电流型模拟电子神经网络的新实现.

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A low-voltage ferrite driver IC with power MOS transistors is presented.

介绍了一种集成低压铁氧体驱动器和功率MOS管 的单片集成电路.

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A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.

提出了应用于毫米波段的MOS变容管的建模方法.

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This paper proposes a new technique to automatically generate STACK layout for MOS analog cell circuits.

提出了一种新的MOS模拟单元电路的STACK版图 自动生成方法.

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Prof. of Electrical Engineering : Kiss is N-type, the latch-up phenomenon in MOS.

电机教授: 接吻是一种N型金属氧化物半导体间的闭锁(锁存;闩锁;锁上)现象.

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Hot-carrier effect is a major reliability failure mechanism of MOS devices and circuits.

热载流子效应是影响MOS器件与电路可靠性的主要因素.

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The nanoscaled molybdenum disulfide ( MoS _ 2 ) was prepared by using supersonic jet mill.

本文采用超音速气流粉碎机对二硫化钼 ( MoS2 ) 粉体进行粉碎,从而得到纳米二硫化钼.

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Effects of Annealing Ambiences on Electrical Properties for Ge MOS Capacitor

退火气氛对Ge MOS电容电特性的影响

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The friction and wear behaviors of the PFW/ PU coatings filled MoS_2 and graphite are dependent on the applied load.

同时，负荷和速度对添加MoS2与石墨的聚四氟蜡/聚氨酯复合涂层的摩擦磨损性能有很大影响。

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The Influence of Preparation Processes on Fretting Wear Life of MoS_2 Bonded Solid Lubricating Coating

制备工艺对MoS2粘结固体润滑涂层微动磨损寿命的影响

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Development of Bonded Coating of Super Fine Powder MoS_2with Graphite

MoS2超细粉和石墨的粘结涂层的研制

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The thesis goes deep into the process, device physical characteristics, manufacturable design and optimization of sub-micron MOS devices. Prepares for the research of system-on-a-chip ( SOC) integrative simulation and optimization in deep sub-micron process.

本课题对亚微米MOS器件工艺、器件物理特性和可制造性设计与优化进行了深入探讨，为深亚微米层次的SOC一体化仿真与优化研究打下基础。

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In 1978, Shanghai Meteorological Observatory recommended the MOS method and used in operation. In 1979, Jilin Province using the Model Output from facsimile broadcast developed a regional MOS method.

我国MOS方法起步并不晚，上海台1978年引进MOS方法并投入业务使用，吉林1979年利用传真图的模式输出发展了地方MOS方法，该方法适合广大台站和第三世界应用。

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It includes column-shared CTIA, DAC, and dummy pixel for static current reduction. Correction data are transferred by DAC to the gates of MOS transistors, to control the bias voltage.

电路采用多列像素共享容式跨阻放大器（CTIA）和DAC，用补偿暗像元扣除静态电流，校正数据经DAC转换送至MOS管的栅极以控制偏置电流达到温度补偿目的。

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Research on Upright Helix Furrowing Opener and Characteristics of Ditching Machine; buried channel mos

立式螺旋开沟器及开沟机整机特性研究埋沟金属氧化物半导体

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