zener diode

Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.

光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。

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zener diode control rail to rail cmos operational amplifier

一种齐纳二极管控制式轨对轨CMOS运算放大器

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this article narrated several kind of plans of examining high accuracy zener diode parameter, emphatically researched the test method of taking high accuracy constant-source as datum current to examine the voltage drift of zener diode.

本文叙述了检测高精度稳压二极管参数的几种方案，重点介绍了以高精度恒流源为基准电流检测稳压二极管电压漂移的测试方法；

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w, silicon zener diode. nominal voltage 43 v, current 17 ma, +-5% tolerance.

3瓦，硅齐纳二极管。额定电压43伏，电流17毫安，+-5%的公差。

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w, silicon zener diode. nominal voltage 75 v, current 10 ma, +-5% tolerance.

3瓦，硅稳压二极管。额定电压75伏，电流为10毫安，+-5%误差。

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along with the zener diode pn junction temperature change, its regulated voltage value can have the corresponding drifting. from the use said its change value is smaller, the constant voltage performance is better.

随着稳压管PN结温度的变化，其稳定电压值会发生相应的漂移，从使用上来说其变化值越小稳压性能越好。

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in the modern electronic circuit instrument and the equipment, took the voltage datum the zener diode, has a more widespread application.

在现代电子线路仪器和设备中，作为电压基准的稳压二极管，有着较广泛的应用。

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therefore, the examination of the zener diode voltage drift parameter has the vital significance.

因此，稳压二极管电压漂移参数的检测具有重要的意义。

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in the voltage regulator circuit, the zener diode which acts as the voltage datum, along with the temperature change, its regulated voltage value also can have the corresponding change.

在稳压电路中，作为电压基准的稳压二极管，随着温度的变化，其稳定电压值亦会发生相应的变化。

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w, silicon zener diode. nominal voltage 39 v, current 19 ma, +-5% tolerance.

3瓦，硅稳压二极管。额定电压39伏，现在的19毫安，+-5%的误差。

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