1、

The silicon thin films on glass substrate were prepared using microwave ECR source enhanced magnetron sputtering.

利用微波ECR等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜.

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2、

High k Gate Dielectric ZrO_2 Thin Films on SOI Substrate with Ultra-Thin Top Silicon

超薄顶层硅SOI衬底上高k栅介质ZrO2的性能

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Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.

从简化步骤、降低成本的角度出发,采用快速热化学气相沉积(RTCVD)法在低纯颗粒带硅(SSP)衬底上制备出了多晶硅薄膜太阳电池。

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Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.

对应更高的衬底温度,因薄膜中的氢不能完全中止纳米晶粒界面的悬键,使薄膜能带带尾加宽。

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5、

ceramic coating was obtained by micro arc oxidation on the substrate of casted aluminum silicon alloy.

用微弧氧化的方法在铸造铝-硅合金基体上获得陶瓷层.

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Residual stress measurement of porous silicon thin film by substrate curvature method

基片曲率法在多孔硅薄膜残余应力检测中的应用

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7、

Requirement of Substrate in thin film magneto sensor is reported. In accordance with the requirement, We select silicon and ferrite of high density as substrate. SiO2 is made insulation film on the substrate.

本文论述了薄膜磁敏元件对基片的要求,依此要求选择硅和高密度铁氧体为基片,上面制备SiO2作绝缘膜。

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Crystalline silicon thin film solar cell on low purity SSP substrate

低纯度颗粒硅带上硅薄膜太阳电池

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Single crystal silicon slice as target, Ar and O_2 respectively as sputtering and reacting gas, a silicon oxides ( SiO_x) film was deposited on Al substrate by reactive magnetron sputtering.

以单晶硅片为靶材,高纯Ar和O2分别为溅射气体和反应气体,采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

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11、

Study and preparation of amorphous silicon solar cell on polymer substrate

聚合物衬底非晶硅太阳电池的研制

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13、

An B-Al-MFI-type zeolite membrane was in-situ synthesized on the surfaces of a boron-silicon porous glass disc by substrate self-transformation in the vapor of ethylamine ( EA) and H2O.

在乙胺和水的混合蒸汽相中,首次通过载体自转晶,在多孔玻璃表面原位合成了B-Al-MFI型沸石膜。

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Investigation on adhesive power of silicon film to glass substrate

玻璃基板上硅薄膜附着力的研究

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15、

Increase in catalyst concentration or silicon dioxide replacing P-type silicon as substrate could lead to denser SWNTs, shorter SWNTs and decrease in erect SWNTs on surface.

研究表明,催化剂浓度升高或采用二氧化硅替代P型硅为生长基底时,都会导致单壁碳纳米管生长的密度加大,而碳纳米管长度变短且更易贴附基底表面生长;

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The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.

衬底pn结间隔能用标准硅工艺实现而不需另外的工艺。

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PZT thin film was fabricated on substrate Pt/ Ti/ SiO2/ Si < 100> by sol-gel method, then annealed in temperature of 600 ℃, PZT micro-force sensors were manufactured by MEMS silicon manufacturing processes.

PZT薄膜在基体Pt/Ti/SiO2/Si(100)上用溶胶一凝胶法制备,然后在600℃下退火。PZT微力传感器完全由MEMS体硅加工工艺来实现。

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18、

Amorphous carbon films were deposited on single crystalline silicon and K9 glass by pulse laser with different negative substrate dc biasing.

在不同的负直流衬底偏压下,用脉冲激光沉积法在单晶Si和K9玻璃衬底上沉积水晶碳膜。

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During annealing process, the substrate is also oxidized, which induces a thin layer of silicon oxide existing at the interface of ZnO/ SiC.

在氧气氛中退火时,衬底也会轻度氧化,从而导致在ZnO/SiC界面处存在一层很薄的Si的氧化层。

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