silicon substrate

Silicon dioxide thin films were prepared by reactive RF magnetron sputtering on silicon substrate.

采用磁控射频反应溅射法在单晶硅片上制备了二氧化硅薄膜.

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In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique.

此技术采用倒装片技术把硅芯片安装到硅基板上。

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Large-area uniform two-dimensional sub-micrometer patterned n-type doped ( 100) silicon substrate has been fabricated by single exposure with a triple beam and wet chemical etching.

在此基础上，采用三束光一次曝光和湿法腐蚀图形转移技术，在n型（100）硅衬底上制备出了周期在亚微米量级的均匀二维图形阵列。

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Some different thickness aluminum reflective films were produced on silicon substrate by using the electron-beam evaporation method and high purity aluminum target. The reflectivity curves of Al film in the visible light region were measured, the density and conductivity of films were analyzed.

采用电子束蒸发的方法，以高纯度的Al为靶材，硅片为衬底，制备了不同厚度的Al反射膜，并测量了在可见光范围内反射率曲线，分析了薄膜的致密性和电导率。

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Aluminum nitride ( AIN) substrate has been recognized as one of ihe most promising electronic substrate as heating panel and packaging materials for its high thermal conductivity, fine electrical insulation, and close coefficient of thermal expansion to silicon semiconductor.

氮化铝材料具有较高的热导率和良好的介电性能，机械强度高，热膨胀系数与半导体硅材料相近，非常适于制造大功率或快速半导体器件的散热基片和封装材料。

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The collimated Cr atoms are focused by a standing-wave laser field as they are deposited on a silicon substrate.

采用了一种新的技术方案减小了实验对大的激光功率的要求.利用激光驻波场会聚准直性较好的Cr原子，并使其沉积在硅基片上形成纳米光栅结构。

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GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。

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In addition, EM simulation of the spiral inductors on the silicon substrate is discussed.

另外, 本论文也讨论到在矽基板上螺旋电感的电磁模拟.

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Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.

研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。

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The experimental results showed that the substrate of pyroelectric sensor could significantly affect the detectivity. The porous silicon dioxide and PET plastic film substrate could effectively decrease the thermal conduction and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the detectivity obviously.

结果表明，多孔氧化硅和PET塑料可有效降低热释电元件的对外热传导，明显提高传感器的电压响应率和降低热释电元件的热噪声。

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Integrated Inductors on silicon were designed and fabricated, and a method was applied to reduce the silicon substrate eddy currents.

设计和制作了硅集成电感，采用常规的硅工艺，在衬底形成间隔的pn结隔离来减少硅衬底的涡流损耗。

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Requirement of Substrate in thin film magneto sensor is reported. In accordance with the requirement, We select silicon and ferrite of high density as substrate. SiO2 is made insulation film on the substrate.

本文论述了薄膜磁敏元件对基片的要求，依此要求选择硅和高密度铁氧体为基片，上面制备SiO2作绝缘膜。

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Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

硅衬底阳极氧化铝膜的荧光发射研究

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Increase in catalyst concentration or silicon dioxide replacing P-type silicon as substrate could lead to denser SWNTs, shorter SWNTs and decrease in erect SWNTs on surface.

研究表明，催化剂浓度升高或采用二氧化硅替代P型硅为生长基底时，都会导致单壁碳纳米管生长的密度加大，而碳纳米管长度变短且更易贴附基底表面生长；

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We found that the detection sensitivity of the mouse IgG microarray was dependent on preparing conditions of porous silicon substrate including etching current density, etching time, and concentration of HF.

实验发现兔抗小鼠IgG抗体检测的灵敏度与多孔硅基底制备时所采用的腐蚀电流密度、腐蚀时间、氢氟酸浓度有关。

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Copper and copper alloy, because of excellent electric and thermal conductivity, are widely applied in electronic seal material, silicon chip substrate, electrical pick-off contact support and contact materials, contact switch, electrode material used in welding and so on.

铜及铜合金由于其优良的导电导热性广泛应用于电子封装材料、硅芯片衬底、.电接触器触头支撑体和触头材料、触头开关、电焊用电极材料等领域。

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Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.

对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。

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Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

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Study on Interface Layer of Diamond Film and Silicon Substrate

金刚石薄膜与硅衬底间的界面过渡层

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Determinations of Mean Charge Depth and Charge Density in Electret Based on Silicon Substrate

硅基多层无机驻极体薄膜中平均电荷重心和密度的确定

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During annealing process, the substrate is also oxidized, which induces a thin layer of silicon oxide existing at the interface of ZnO/ SiC.

在氧气氛中退火时，衬底也会轻度氧化，从而导致在ZnO/SiC界面处存在一层很薄的Si的氧化层。

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