silicon substrate的例句大全

Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

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Large-area uniform two-dimensional sub-micrometer patterned n-type doped ( 100) silicon substrate has been fabricated by single exposure with a triple beam and wet chemical etching.

在此基础上，采用三束光一次曝光和湿法腐蚀图形转移技术，在n型（100）硅衬底上制备出了周期在亚微米量级的均匀二维图形阵列。

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the surface chemical treatment of sio_2 film electret and its wafer p-silicon substrate crystal orientation

SiO2膜驻极体的表面化学处理及其P-型硅基片的晶向选择

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for p-type ( 100) silicon substrate, the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer.

本文指出，在影响P型（100）硅处延埋层图形畸变的诸因素中，衬底晶向偏离度是决定性的。

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In addition, EM simulation of the spiral inductors on the silicon substrate is discussed.

另外, 本论文也讨论到在矽基板上螺旋电感的电磁模拟.

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Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

硅衬底阳极氧化铝膜的荧光发射研究

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Integrated Inductors on silicon were designed and fabricated, and a method was applied to reduce the silicon substrate eddy currents.

设计和制作了硅集成电感，采用常规的硅工艺，在衬底形成间隔的pn结隔离来减少硅衬底的涡流损耗。

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The collimated Cr atoms are focused by a standing-wave laser field as they are deposited on a silicon substrate.

采用了一种新的技术方案减小了实验对大的激光功率的要求.利用激光驻波场会聚准直性较好的Cr原子，并使其沉积在硅基片上形成纳米光栅结构。

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co/ cu/ co sandwiches were fabricated on crystalline silicon substrate by uhv electron beam evaporation. the influence of substrate orientation, material of buffer layer and fabrication temperature on the giant magnetoresistance ( gmr) effect in the sandwiches was studied.

采用超高真空电子束蒸发方法在硅单晶衬底上制备了Co／Cu／Co三明治膜，研究了衬底晶向、过渡层材料和生长室温度对三明治膜中巨磁电阻效应的影响；

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Determinations of Mean Charge Depth and Charge Density in Electret Based on Silicon Substrate

硅基多层无机驻极体薄膜中平均电荷重心和密度的确定

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Some different thickness aluminum reflective films were produced on silicon substrate by using the electron-beam evaporation method and high purity aluminum target. The reflectivity curves of Al film in the visible light region were measured, the density and conductivity of films were analyzed.

采用电子束蒸发的方法，以高纯度的Al为靶材，硅片为衬底，制备了不同厚度的Al反射膜，并测量了在可见光范围内反射率曲线，分析了薄膜的致密性和电导率。

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In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique.

此技术采用倒装片技术把硅芯片安装到硅基板上。

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GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。

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Silicon dioxide thin films were prepared by reactive RF magnetron sputtering on silicon substrate.

采用磁控射频反应溅射法在单晶硅片上制备了二氧化硅薄膜.

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We found that the detection sensitivity of the mouse IgG microarray was dependent on preparing conditions of porous silicon substrate including etching current density, etching time, and concentration of HF.

实验发现兔抗小鼠IgG抗体检测的灵敏度与多孔硅基底制备时所采用的腐蚀电流密度、腐蚀时间、氢氟酸浓度有关。

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Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.

研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。

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Study on Interface Layer of Diamond Film and Silicon Substrate

金刚石薄膜与硅衬底间的界面过渡层

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An B-Al-MFI-type zeolite membrane was in-situ synthesized on the surfaces of a boron-silicon porous glass disc by substrate self-transformation in the vapor of ethylamine ( EA) and H2O.

在乙胺和水的混合蒸汽相中，首次通过载体自转晶，在多孔玻璃表面原位合成了B-Al-MFI型沸石膜。

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Zirconium dioxide films were grown by RF reactive magnetron sputtering at different substrate temperatures on various substrates, including glass, silicon, fussed quartz, and NaCl, respectively.

利用射频反应磁控溅射在显微玻璃、单晶硅片、NaCl片和石英上沉积ZrO2薄膜。

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Study and preparation of amorphous silicon solar cell on polymer substrate

聚合物衬底非晶硅太阳电池的研制

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