hbt

High Speed AlGaAs/ GaAs HBT D-Type Flip Flop and Static Frequency Divider

高速AlGaAs/GaAs HBT D-触发器和静态分频器

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Analysis of DC and RF Characterizations of InGaP/ GaAs HBT with Emitter Air-Bridge Interconnection

发射极空气桥InGaP/GaAs HBT的DC和RF特性分析

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Optimized structure of InP-based HBT used for OEIC application was designed. 2.

提出了可用于光电集成的InP基HBT的优化设计方案。

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By means of the formulae derived from device physics of HBT, the influence of device parameters on the minimum noise figure is also represented.

同时通过基于异质结双极晶体管器件物理的公式，给出了器件参数对器件最小噪声系数的影响。

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A Planar Integration SiGe HBT with High Current Gain

一种具有高电流增益的平面集成SiGe HBT

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A Novel Structure of InP Based HBT for OEIC

用于光电集成的InP基HBT新结构

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The reason why the transmit data bit rate of the cascode HBT circuit rises is analyzed.

文中分析了新的电路结构提高传输速率的原因并给出了模拟结果。

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A model of the base transit time of SiGe HBT

SiGe HBT基区渡越时间模型

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An Emitter Delay Time Model of an SiGe HBT

SiGe HBT发射极延迟时间模型

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GaAs/ GaAsSb metamorphic HBTs ( MM HBTs) have great potential applications because they have both the relative low cost of GaAs-based and highfrequency of InP-based HBT.

GaAs/GaAsSb HBT（MM HBT）由于兼备GaAs的相对低成本和InP HBT的高频等优点，有着广泛的应用前景。

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Based on the consideration of carrier transit of the SiGe HBT, the B-E junction capacitance model related to carrier distribution and the B-C junction capacitance model under different current densities are established and analysed.

在SiGe HBT载流子输运基础上，建立了考虑发射势垒区载流子分布的势垒电容模型和不同电流密度下的集电结势垒电容模型。

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A planar integration SiGe HBT with polysilicon emitter is fabricated, which has a current gain greater than 1 500 at room temperature and even up to 2 800 at its maximum.

研制了一种平面集成多晶发射极SiGe HBT。经测量，在室温下电流增益β大于1500，最大达到2800，其Vceo为5V，厄利（Early）电压VA大于10V，βVA乘积达到15000以上。

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Objective : To establish the quality standard for Houyanqing buccal tablet ( HBT ).

目的: 制定喉咽清 含片 的质量标准.

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The circuit design, fabrication, and performance of high-speed AlGaAs/ GaAs HBT D-type flip flop and static frequency divider integrated circuits are described.

叙述了高速AlGaAs/GaAs HBT D-触发器和静态分频器的设计、制造和性能。

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Design of Front-end for High Performance pin/ HBT OEIC Transimpedance Photoreceiver

高性能pin/HBT集成光接收机前端设计

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Analysis of an AlGaAs/ GaAs HBT's Third-order Intermodulation Distortion Using Volterra Series

应用Volterra级数分析AlGaAs/GaAs HBT的三阶互调失真

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Study of the SiGe HBT based on the self-alignment and air-bridge

基于自对准和空气桥工艺的SiGe HBT研究

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Improvement of Transmit Data Bit Rate and Characteristic of Optical Modulator Driver Circuit by Cascode HBT

用新的电路形式提高HBT光调制器驱动电路的传输速率及性能

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