voltage stress

Temperature stress and voltage stress are used to accelerate the life test.

试验采用温度应力和电应力的双应力加速寿命试验。

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The Difference of TDDB under Constant Voltage Stress and Pulse Voltage Stress

脉冲和直流应力下栅氧化膜击穿特性的差别

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This paper discusses the difference of TDDB ( Time Dependence Dielectric Break down) under constant voltage and pulse voltage stress.

本文讨论了在直流电压应力和脉冲电压应力作用下栅氧化膜击穿寿命的差别，脉冲应力下栅氧化膜击穿寿命大于直流电压下的击穿。

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The stress voltage plays a key role on oxide breakdown.

应力电压在栅氧化层中起着重要的作用.

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The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

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This paper proposes a half-bridges-in-series hybrid converter with current doubler rectifier. The voltage stress of each main switch is only half of the input voltage.

提出一种倍流整流输出半桥串联混合式直流变换器，主开关管的电压应力低于输入电压，并在满载时均为输入电压的50%。

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The voltage at motor terminal would be double because of the effects of cable distributed parameters when motor is fed with PWM inverter through a long cable therefore resulting in a heavy stress on motor.

PWM逆变器通过长线电缆与电机连接时，由于电缆分布参数的影响会在电机端产生2倍的过电压，从而使电机承受的应力大为增加。

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