voltage stress的例句大全

Temperature stress and voltage stress are used to accelerate the life test.

试验采用温度应力和电应力的双应力加速寿命试验。

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This paper discusses the difference of TDDB ( Time Dependence Dielectric Break down) under constant voltage and pulse voltage stress.

本文讨论了在直流电压应力和脉冲电压应力作用下栅氧化膜击穿寿命的差别，脉冲应力下栅氧化膜击穿寿命大于直流电压下的击穿。

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This paper proposes a half-bridges-in-series hybrid converter with current doubler rectifier. The voltage stress of each main switch is only half of the input voltage.

提出一种倍流整流输出半桥串联混合式直流变换器，主开关管的电压应力低于输入电压，并在满载时均为输入电压的50%。

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The Difference of TDDB under Constant Voltage Stress and Pulse Voltage Stress

脉冲和直流应力下栅氧化膜击穿特性的差别

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The voltage at motor terminal would be double because of the effects of cable distributed parameters when motor is fed with PWM inverter through a long cable therefore resulting in a heavy stress on motor.

PWM逆变器通过长线电缆与电机连接时，由于电缆分布参数的影响会在电机端产生2倍的过电压，从而使电机承受的应力大为增加。

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stress-analysis of low voltage circuit breaker operating mechanisms

低压断路器操作机构的应力分析

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The stress voltage plays a key role on oxide breakdown.

应力电压在栅氧化层中起着重要的作用.

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These outside conditions include environmental temperature, voltage, tensile stress, and bending load.

这些外部环境因素包括:环境温度, 外加电压, 拉伸应力, 弯曲荷载.

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By analysing the testing results, the relationships were gained between electric voltage and current, temperature and electric resistance, tensile stress and electric resistance, bending reformation and electric resistance.

通过对实验结果的分析，得到了外加电压与通过材料的电流、温度变化与材料电阻、拉伸应力与材料纵横向体积电阻率、弯曲变形与材料纵横向体积电阻率的关系。

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The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

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The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.

a-Si∶H/sin x∶H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。

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