reactive ion etching

The Study On Deep Reactive Ion Etching of Silicon

反应离子深刻蚀硅的研究

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Reactive Ion Etching of Deep U Trench

深U型槽的反应离子刻蚀技术

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Research on Deep Reactive Ion Etching Technology

反应离子深刻蚀（RIE）技术的研究

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Reactive Ion Etching of Silicon and Tantalum Silicide for Submicron Structures

硅及硅化钽超精细结构的刻蚀

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Lithography and Reactive Ion Etching of Silicon-Based Photon Crystal Slab

硅基光子晶体板的光刻和反应离子刻蚀

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Reactive Ion Etching of Al-Si Alloy: Select Etching Parameters

Al-Si合金RIE参数选择

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In Situ Monitoring of Etching End Point for Plasma and Reactive ion Etching by the Optical Reflection

等离子与反应离子刻蚀终点的在线监测&光学反射法

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The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.

介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作。

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Study on Anisotropic Etching in Reactive Ion Etching of PMMA

反应离子刻蚀PMMA的各向异性刻蚀研究

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Study on Deep Reactive Ion Etching of Polymethylmethacrylate Sheet Microstructure

商品有机玻璃片微结构的深刻蚀研究

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Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching

在硅深－亚微米沟道反应离子刻蚀中气体成分对深度减小的影响

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Study on deep reactive ion etching of silicon using sf_6/ ccl_2f_2 with o_2 addition

SF6／CCl2F2反应离子深刻蚀硅中加O2的研究

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The waveguide device was fabricated by-coating films , using aluminum as mask and oxygen reactive ion etching.

我们采用旋涂 、 铝掩膜和氧反应离子刻蚀的方法(RIE)制得了聚合物阵列式光波导器件.

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Experimental Investigation of Fully Automatic Reactive Ion Etching 3 inch GaAs Wafer

全自动反应离子腐蚀3英寸GaAs片实验研究

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An Investigation of Reactive Ion Etching for Through Silicon Via Packaging Technology

反应离子刻蚀在穿透硅通孔封装技术中的应用研究

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Behaviour of Ar~+ Ion in Reactive Ion Etching of ⅲ-ⅴ Compound

氩离子在反应离子腐蚀Ⅲ-Ⅴ族材料中的作用

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Reactive Ion Etching of SiO_2 in Planar Lightwave Circuit Fabrication

SiO2平面光波导工艺中的反应离子刻蚀研究

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Study on Magnetically Enhanced Reactive Ion Etching of BST Thin Films

BST薄膜的磁增强反应离子刻蚀研究

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Experimental Research of Higher Magnetically Enhanced Reactive Ion Etching

强磁场增强反应离子腐蚀实验研究

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Deep Reactive Ion Etching ( DRIE) Device in the MEMS Fabrications

用于MEMS器件制造的深反应离子刻蚀设备

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Reactive Ion Etching of Silicon for Trench Isolation

深槽隔离技术中硅的反应离子刻蚀

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By means of SiO 2 mask and SF 6 etching corrosive, the cantilever beam with tip is shaped by reactive ion etching once through operation. The probe has been shaped by wet corrosive and the tip radius is about 50 nm.

以SiO2为掩模，SF6刻蚀硅，用RIE与各向同性湿法化学腐蚀相结合使悬臂梁探针一次成形和用湿法腐蚀锐化探针，针尖半径约50nm。

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Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

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Research on the Technological Factors for the Reactive Ion Etching

反应离子刻蚀工艺因素研究

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Electrical Characterization of Silicon Surface After Reactive Ion Etching of Silicon Dioxide by CHF_3

用CHF3进行SiO2反应离子腐蚀后Si表面的电特性

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Reactive ion etching of polysilicon using SF6+ Ar reactive gas is investigated.

本文对以SF6+A r为反应气体的反应离子刻蚀（RIE）多晶硅工艺进行了研究。

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Study of the self-optimizing power matching network used in plasma etching and reactive ion etching

PE/RIE用自寻优功率匹配器的研究

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A Reactive Ion Etching Rate Model for VLSI Process Simulation

一种用于VLSI工艺模拟的反应离子刻蚀速率模型

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Process of Al Reactive Ion Etching

铝-RIE刻蚀工艺

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The rooting effect of the structure in deep reactive ion etching ( DRIE ) process was investigated.

给出了加速度计的制作工艺流程,研究了解决深 反应离子刻蚀 过程中的过刻蚀现象的方法.

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