transistor amplifier的例句大全

study of the diagrammatic methods for the transistor amplifier circuit

晶体管放大电路图解法应用的延伸

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Transistor amplifier circuit has oscillation preventing diode connected to connecting wire of2 transistors to prevent inductance due to wire length.

晶体管放大电路拥有一个防震二极管以防止由电线长度引起的自感应现象，此防震二极管连接在2个晶体管金属丝接头上。

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They are ignorant of the performance of this type of transistor amplifier.

他们对这类晶体管放大器的性能一无所知.

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Using the internal relations among the transistor small signal parameter models such as H 、π and Y, We may sum up the general express form and characteristic of the common emitter amplifier gain under different parameter models.

利用晶体管不同参数模型间的内在联系，归纳出在模型参数下的共射放大电路增益的一般表达形式及其特点。

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Through the ingenious cooperation of BIMOS OP amplifier and VMOS FET ( filed effect transistor), making the instrument have higher precision and better performance.

由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。

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The Technique of Super Class A Hi Fi Amplifier with the Front Electron Tube Set Behind the Transistor

前胆后石超甲类高保真功放研制一套高保真家用音箱的业余制作

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A class E amplifier can be constructed using either bipolar transistor or MEMS switch.

分析一种基于E类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。

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Admission at the transistor, amplifiers, the widespread adoption of push-pull power amplifier circuit.

在晶体管收 、 扩音机中, 广泛采用推挽功率放大电路.

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Through the low-noise amplifier designed, the spectrum and time figure of the transistor noise at low frequency ( 100mHz~ 1.65Hz) was measured, besides that, the scale invariant range and fractal dimension are calculated with several methods.

利用设计的低噪声放大器，测量出晶体管低频段（100mHz&1.65Hz）噪声的功率谱及时间波形，找出了其无标度区间，并用多种方法计算了分形维。

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Purpose High-gain amplifier transistor.

用途:高增益放大.

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With the whole new method, simple calculation instead of the traditional measures which used to design low noise single-stage negative feedback amplifier, the relations among the transistor data, feedback effect, noise factor, as well as singal resistance are studied.

本文一改过去负反馈低噪声放大器的设计步骤，采用全新的方法&方框图法，确定了负反馈电路中晶体管参数，反馈深度、噪声系数、信号源内阻和工作频率之间的关系。

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Then it presents the difficulties about the design of low noise amplifier after reading a large number of literatures, including the matching network, the stability of the transistor and so on.

在阅读大量相关文献的基础上，分析了低噪声放大器研制过程中遇到的困难，包括匹配电路的设计以及提高晶体管稳定性的方法等等问题。

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