reactive etching的例句大全

The oxygen reactive etching during the processing is found out to be an effective way to improve the photoluminescence of ZnO nanorods.

论文还发现长时间氧气反应离子刻蚀能够提高氧化锌纳米棒光致发光特性的作用。

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Ion reactive etching mechanisms of HfO 2 films in CHF 3/ Ar and SF 6/ Ar plasma were experimentally studied to promote its potential application in fabrication of new generation CMOS.

研究了HfO2薄膜在CHF3/Ar和SF6/Ar等气体中的反应离子刻蚀机理。

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Study of the self-optimizing power matching network used in plasma etching and reactive ion etching

PE/RIE用自寻优功率匹配器的研究

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Research on Deep Reactive Ion Etching Technology

反应离子深刻蚀（RIE）技术的研究

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Experimental Research of Higher Magnetically Enhanced Reactive Ion Etching

强磁场增强反应离子腐蚀实验研究

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Reactive Ion Etching of Al-Si Alloy: Select Etching Parameters

Al-Si合金RIE参数选择

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Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

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Reactive Ion Etching of Silicon and Tantalum Silicide for Submicron Structures

硅及硅化钽超精细结构的刻蚀

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Experimental Investigation of Fully Automatic Reactive Ion Etching 3 inch GaAs Wafer

全自动反应离子腐蚀3英寸GaAs片实验研究

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Behaviour of Ar~+ Ion in Reactive Ion Etching of ⅲ-ⅴ Compound

氩离子在反应离子腐蚀Ⅲ-Ⅴ族材料中的作用

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Electrical Characterization of Silicon Surface After Reactive Ion Etching of Silicon Dioxide by CHF_3

用CHF3进行SiO2反应离子腐蚀后Si表面的电特性

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Study on deep reactive ion etching of silicon using sf_6/ ccl_2f_2 with o_2 addition

SF6／CCl2F2反应离子深刻蚀硅中加O2的研究

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The SiO2 holographic blazed grating with good quality and high diffraction efficiency have been developed by reactive ion beam etching and holographic grating mask made by lensless Fourier transform holography recording.

本文报道以无透镜傅里叶全息术变换记录的全息光栅作掩膜，应用反应离子束入射角控制光栅闪耀角，选择了合适刻蚀工艺参数，制得衍射效率为67%的SiO2全息闪耀光栅。

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Reactive ion beam etching technique has been effectively used to study and fabricate large-scale and ultra large scale integrated circuit, acoustic surface wave device, magnetic bubble device microwave device, integrated optical circuit, superconducting device, shimmer optical pattern etc.

反应离子束刻蚀技术已有效地用于研究和制造大规模和超大规模集成电路，声表面波器件，磁泡存储器，微波器件，集成光路，超导器件，闪烁光栅等。

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Refractory metals multilayer, grown on silica coated Si wafer, was etched by reactive ion etching ( RIE).

分析了用反应离子刻蚀（RIE）系统刻蚀多层难熔金属的可行性。

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Process of Al Reactive Ion Etching

铝-RIE刻蚀工艺

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The Study On Deep Reactive Ion Etching of Silicon

反应离子深刻蚀硅的研究

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Study on Deep Reactive Ion Etching of Polymethylmethacrylate Sheet Microstructure

商品有机玻璃片微结构的深刻蚀研究

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Research on the Technological Factors for the Reactive Ion Etching

反应离子刻蚀工艺因素研究

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By means of SiO 2 mask and SF 6 etching corrosive, the cantilever beam with tip is shaped by reactive ion etching once through operation. The probe has been shaped by wet corrosive and the tip radius is about 50 nm.

以SiO2为掩模，SF6刻蚀硅，用RIE与各向同性湿法化学腐蚀相结合使悬臂梁探针一次成形和用湿法腐蚀锐化探针，针尖半径约50nm。

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