The emphasis is put on the new power electronic devices& IGBT and MCT.

1、

Implementation of GPIB and JNI in extracting system of power electronics device

GPIB及JNI在电力电子器件参数辨识系统中的应用

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2、

Compared with various power devices, power MOSFET were employed as the switches of two inverters.

分析对比了各种常用电力电子器件，选择了功率MOSFET作为一次逆变和二次逆变开关元件。

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3、

With the development of solid state power devices and DSP, variable frequency vector control based on DSP has been the trend for electromotor control.

随着电力电子器件和数字信号处理器的发展，基于DSP的变频矢量控制逐渐成为电机控制的趋势。

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4、

The PSPICE Multiple Transient Analysis for the Study of Power Electronic Device Model Characteristics

用PSPICE多瞬态分析法建立新型电力电子器件的模型特性

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5、

PSPICE Diode controlled Switch Model for Power Electronic Devices

电力电子器件的PSPICE二极管&可控开关模型

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6、

The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.

二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；

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7、

In high precision DC servo system, the PWM power amplifier based on power electronic devices is mainly used.

在高精度伺服控制系统中，大多采用基于电力电子器件的脉宽调制型功率放大器，简称PWM功率放大器。

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8、

In contrast to the traditional FACTS controllers, IPCs can be constructed by conventional elements instead of power electronic devices.

与其它FACTS装置不同，它可以不采用电力电子器件，而仅由常规器件组成。

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9、

The Simulation and Design of the Power Electronic Based on Matlab and VB

基于Matlab和VB的电力电子器件仿真设计

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10、

An object oriented way for power electronic device modeling

一种面向对象的电力电子器件建模方法

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11、

Application of Silicon Direct Bonding Technique in New Power Electronic Device

硅直接键合（SDB）技术在新型电力电子器件应用中的新进展

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12、

The principle of PM synchronous motor is introduced, and the development of microprocessor, power electronic devices, transducer, PWM technology and sensorless control technology are reviewed in this paper.

本文综述了伺服控制的基本原理，接着回顾了微处理器、电力半导体器件、传感器、控制策略、PWM技术和无传感器控制技术。

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13、

A microelectronic test pattern for evaluating bipolar devices ( npn or pnp transistors) is presented.

本文提出一种用于科学地评价双极型半导体器件（npn或pnp晶体管）工艺水平的微电子测试图形。

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14、

VDMOS is microelectronics and power electronics integrate a new generation of power semiconductor devices.

VDMOS是将微电子技术和电力电子技术融合起来的新一代功率半导体器件。

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15、

The study on single electron transportation induced by a high frequency surface acoustic wave ( SAW) has important influence on the base theory of Physics, further development of semiconductor devices and the research of metrology.

高频表面声波（SAW）驱动下的单电子输运问题的研究对物理学的基础理论、半导体器件的进一步发展和计量学的研究具有重要意义。

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16、

Use of the Three-Dimensional TLM Method in the Thermal Simulation and Design of Semiconductor Devices

三维TLM方法在半导体器件的热模拟和热设计中的应用

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17、

In some situations, semiconductor devices and circuits must operate under possible impact of an electromagnetic pulse ( EMP).

在某些情况下，半导体器件或电路必须工作在电磁脉冲（EMP）干扰之下。

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18、

The solution using a spline procedure, SADI, and a high-order compact finite difference ( HOC) method is presented for the hydrodynamic ( HD) model for semiconductor device simulation.

采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。

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19、

Adopting full-controllable electric semiconductor device IGBT, a 160 kW/ 30 kHz parallel-resonance super-frequency induction heating power supply has been developed.

采用全控型电力半导体器件IGBT，研制了160kW/30kHz并联逆变式超音频感应加热电源。

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20、

The destructive physical analysis ( DPA) is used to detect the semiconductor devices.

破坏性物理分析（DPA）是用于检测半导体器件的。

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