impact ionization

This paper analyzes impact ionization models of super thin gate oxide breakdown, and gives a detailed description of hole breakdown theories. It lays the foundation for the deep study of super thin gate oxide breakdown theories and for the modeling of super thin gate oxide breakdown.

分析了超薄栅氧化层击穿的碰撞电离模型，并对空穴击穿机理进行了详细描述，为超薄栅氧化层的击穿机理的深入研究及超薄栅氧化层击穿模型的建立奠定了基础。

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Included in the model were the physical mechanisms such as carrier-carrier scattering, SRH and Auger recombination, impact ionization and so on.

模型考虑了载流子间散射、SRH和俄歇复合、碰撞电离等物理效应。

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The atomic processes of electron impact ionization and elastic scattering by plasma ions are included. The thermal and streaming motion of the ions along the magnetic field is also taken into consideration.

考虑了氦原子被电子碰撞电离，氦原子与等离子体离子之间的弹性散射等原子过程以及离子的热运动和沿磁力线的流动。

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It is unfavorable to study MS of aminoglycosides using electron impact ionization.

使用电子轰击离子化方法研究氨基糖甙类是不理想的.

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With respect to the different mechanisms of carrier injection by the field, the authors take thermal emission and impact ionization into account, respectively.

根据电场注入载流子机理的不同，作者分别考虑了热发射和碰撞电离脱阱起作用下的一级捕获动力学方程。

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