electron-hole

[e'lektrɒnh'əʊl]
  • electron-hole
  • 释义

    [医]电子穴;

纠错 数据更新时间:2026-04-18 14:39:44
1、

Exciton is electron-hole pair held together by their mutual Coulomb interaction.

激子就是由电子和空穴在相互间的库仑力作用下,相互维持在一起的电子 -- 空穴对.

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2、

Electron-hole conduction is dominant in oxygen or air;

在氧气及空气中,以电子空穴导电为主;

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3、

The in-situ formed Bi2O2CC3/ Bi3NbO7heterojunction structure can effectively extend the life of the light generated electron-hole.

原位制备所形成的Bi2O2CO3/Bi3NbO7异质结结构可以有效延长光生电子空穴的寿命。

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4、

The semiconductor as a photocatalyst can absorb solar energy to generate photoinduced electron-hole pairs with powerful redox ability. Through a series of degradation reactions initiated by electrons and holes, the gaseous pollutants can be decomposed into harmless carbon dioxide and water.

光催化技术的基本原理是,半导体光催化剂吸收太阳能,产生具有氧化还原活性的电子空穴对,进而通过一系列分解反应将有机污染物降解为无毒无害的二氧化碳和水。

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6、

However, when reached to a certain thickness, the probability of electron-hole recombination increased, so the photocurrent decreased with the increase of thickness.

但达到一定厚度后,电子空穴复合的几率增加,光电流开始随膜厚的增大而逐渐减小。

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7、

One of the most important techniques in improve the conversion efficiency is to reduce the surface reflectance to absorb more light energy to generate more electron hole pairs.

提高光电转化效率的关键环节之一是降低硅片表面反射率,吸收更多的光以产生电子空穴对。

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8、

The fluorescence quenching of the G-TiO2 indicated that graphene could hinder the recombination of electron-hole pairs of TiO2.

石墨烯的引入可以有效阻止TiO2电子空穴对的复合,这可以用G-TiO2的荧光淬灭来证明。

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9、

However, the combination speed of photogenerated electron-hole pairs was high, which restrains photocatalytic activity of individual semiconductor.

但是,单组份半导体的光生电子空穴对的结合速度非常迅速,这抑制了它们的光催化活性。

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10、

Sherwin explained that when light of the correct frequency is incident on a quantum well, it creates bound electron-hole pairs called excitons and is absorbed.

舍温解释说,当频率合适的光线附到一个量子井上时,它会创造出一对叫做“电子空穴对”的电子束缚洞,而光线会被其所吸收。

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11、

As with a conventional photodiode, absorption of incident photons creates electron-hole pairs.

和传统的光电二极管一样, 吸收入射光子会造成电子和空穴对.

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12、

Design and Analysis of Single Electron hole Trap Memory

电子空穴对单电子陷阱存储器的设计与分析

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13、

The numerical results show that with the increase of the height of quantum dat ( the barrier thickness), the exciton energy and electron-hole recombination rate are reduced and the quantum dot emission wavelength is increased.

结果表明,量子点高度LGaN、势垒层厚度LAlGaN的增加将导致激子结合能、电子空穴复合率的降低,耦合量子点发光波长的增加。

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14、

It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.

提出了腐蚀机理,光照激发位错处产生电子空穴对,加速位错处的腐蚀速率。

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15、

The enhancement of photocatalytic activity results from suppressing the excited electron-hole pair recombination.

这种光催化的增强主要是由于光生电子空穴对的复合被抑制的结果。

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16、

In addition, the thickness of thin film had a significant influence on photocurrent. The thicker the film was, the more ultraviolet the film can absorb, the more electron-hole pairs there were, so the higher the photocurrent would be.

另外膜厚对光电流强度也有显著影响,膜层越厚,对紫外光的吸收越强,生成的电子空穴对越多,所产生的光电流也就越强。

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17、

The electron hole conductivity had no change while free electron conductivity decreased with the increase of the Al_2O_3 content.

随着Al2O3含量的增加,电子空穴电导率变化不明显,自由电子电导率减小。

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