bipolar transistor是什么意思_bipolar transistor的中文翻译|音标|读音|用法|短语例句|近反义词

1、

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

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2、

VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

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3、

By controlling the light wave-form of Xe lamp with insulated gate bipolar transistor ( IGBT) and using the periodic long-pulse chopper technology, a long pulsed medical Nd: YAG laser was designed.

运用绝缘栅双极型晶体管（IGBT）对泵浦氙灯进行斩波放电，并采用间歇式长脉冲斩波技术，设计了一套能发射和控制长脉冲激光的Nd：YAG激光器。

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4、

A bipolar transistor and its fabrication are described.

描述了双极型晶体管及其制造.

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5、

The IGBT full name is Insulate Gate Bipolar Transistor, namely the insulation grid bipolar transistor, it is new semiconductor devices which rapidly develop in recent years.

IGBT的全称是Insulate Gate Bipolar Transistor，即绝缘栅双极晶体管，是近年来迅速发展起来的新型半导体器件。

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6、

design and application on insolated gate bipolar transistor pulse chopper

绝缘栅双极晶体管脉冲斩波器的设计与应用

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7、

A New Global Optimization Method of Parameter Estimation in Bipolar Transistor GP Model

晶体管GP模型参数提取中的一种全局寻优算法

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8、

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

空穴注入控制型横向绝缘栅双极晶体管

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9、

Transistor , also known as semiconductor transistor or bipolar transistor.

半导体三极管又称晶体三极管或双极型三极管.

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10、

A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。

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11、

Transient Turn-off Fast Relaxation of Complementary Lateral Insulated-Gate Bipolar Transistor

互补型横向绝缘栅双极晶体管的截止瞬态快速弛豫

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12、

The inverter can be manufactured with the insulation gate bipolar transistor module.

逆变器采用绝缘栅双极晶体管模块制造。

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13、

A class E amplifier can be constructed using either bipolar transistor or MEMS switch.

分析一种基于E类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。

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14、

Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection

绝缘栅双极晶体管驱动保护集成电路设计

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15、

Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

绝缘栅双极二级管 ( IGBT ) 作为一种可控开关, 获得了广泛应用.

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16、

The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

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17、

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

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18、

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

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19、

Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.

阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管（HVIGBT）斩波器替代门极可关断晶闸管（GT0）斩波器，以实现静止辅助系统的国产化。

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20、

The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

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21、

The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

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22、

In a bipolar transistor , the control area or the electrical connection to the control area.

在双极晶体管中, 指控制区域或和控制区相连的导电连接.

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23、

In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

近些年，绝缘栅双极型晶体管（IGBT）在现代电力电子技术中应用广泛。

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24、

The study on the theory of the edge crowding effect of emitter current in a bipolar transistor is reviewed.

本文对双极晶体管发射极电流集边效应的理论研究作了回顾。

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25、

Mixing-signal stimulation method can enhance dissipation of bipolar transistor evidently , especially first cascade amplifying circuits.

理论分析和实践结果都表明, 本文所提出的方法能有效地改善有源低热器件的红外热图像.

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