MOCVD

The influence of the thickness deviation on the reflection spectrum of semiconductor materials DBR was analyzed using the transfer matrix method. By the influence, a determining method of the thickness of the DBR grown by MOCVD was presented.

应用传输矩阵方法分析了厚度偏差对半导体布拉格反射镜（DBR）反射谱的影响，并利用这种影响提出了一种金属有机化合物汽相淀积（MOCVD）制备布拉格反射镜精确确定外延厚度的方法。

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at last, we simulate benard convection within the mocvd reactor. it is found that the critical ra number is larger than predicted by current theory.

文章最后还模拟了MOCVD反应器内的Benard对流，发现发生Benard对流的临界Ra数大于理论预期值，其原因可能是由于模拟条件并非纯自然对流，反应腔内强迫对流依然发挥一定作用的缘故。

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ZnO thin films were grown on Cu/ Si ( 111) template by atmospheric pressure MOCVD. The effect of the growth temperature of buffer layer on the properties of ZnO films was studied.

采用常压MOCVD方法在Cu/Si（111）基板上生长ZnO薄膜，研究了缓冲层的生长温度对ZnO外延膜性能的影响。

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The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO_2 ( antireflective coating) are also discussed.

对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究，并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响。

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Using the GaN epilayer which was grown on Si ( 111) by MOCVD to fabricate GaN ultraviolet detectors is reported in this paper.

采用MOCVD技术在Si（111）衬底上生长GaN薄膜，以此材料制备成光导型Si基GaN紫外探测器。

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Metal Organic Chemical Vapor Deposition ( MOCVD ) is a key technology in growing thin-films.

金属有机化学气相沉积 ( OCVD ) 一门制备薄膜材料的关键技术.

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InP Based Long Wavelength Transmitter OEIC Structure Grown by MOCVD

InP基长波长光发射OEIC材料的MOCVD生长

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MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices

锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析

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Therefore ALE is also called "digital epitaxy". In comparison with conventional MBE and MOCVD, ALE offers advantages of greater thickness uniformity, fewer surface defects, less edge growth in selective epitaxy and monolayer control in sidewall epitaxy.

与传统的MBE和MOCVD相比，ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。

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The membrane formed inside the porous of support by MOCVD process is resistant to hydrogen embrittlement.

由金属有机气相沈积法(MOCVD)在载体孔内沈积钯膜有助于防止氢的脆化作用.

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Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD

MOCVD生长GaN的反应动力学分析与数值模拟

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Optimum Structural Design for QW Laser Material and Grown by MOCVD

MOCVD生长量子阱激光器材料及结构的优化设计

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MOCVD Grown Quantum Well Laser Materials with MQB

MOCVD生长带有MQB的量子阱激光器材料

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The temperature field uniformity of the reaction chamber, as the core component of MOCVD, directly influences the quality and properties of materials.

反应室作为MOCVD设备的核心部件，其温度场的均匀性直接影响到生长材料的质量。

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Continuous preparation of YBCO superconducting tape on Ag substrate by MOCVD

在Ag基体上用MOCVD法连续制备YBCO超导带

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This article firstly introduces the composition of MOCVD, and makes a brief description for each part, mainly the structure of the reaction chamber.

本文首先从MOCVD设备的结构入手，介绍了MOCVD系统的组成，并对各个组成部分功能做了简要描述，重点介绍了反应腔的结构。

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Thermodynamic Analysis of MOCVD Epitaxy Process Design for Ga In As Sb Alloy Semiconductor

Ga-In-As-Sb合金半导体MOCVD外延工艺设计的热力学分析

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Performance Comparison of GaAs/ AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

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A brief introduction to CBE comparing with MBE and MOCVD is presented in this paper.

本文主要通过与MBE和MOCVD的对比,对CBE作了简单的介绍.

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Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.

介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.

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MOCVD Growth of Carbon Doped GaAs/ AlGaAs High Power Semiconductor Lasers

MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

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This article mainly studies the temperature control system of MOCVD.

本文主要研究MOCVD设备的温度控制。

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A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

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Design of MOCVD control system on GaN growth

GaN系半导体材料生长的MOCVD控制系统设计与实现

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Based on MOCVD Temperature Control System Structure Research

基于MOCVD温度控制系统结构研究

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MOCVD Long Range Monitor and Control System Design

MOCVD远程监控系统设计

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This paper presents a new fuzzy predictive control method for the MOCVD device control system set to handle the non-linearity, time variability and large delay of plant controls.

为解决金属有机化合物化学气相淀积（MOCVD）设备温度控制的非线性、时变性以及大滞后等问题，给出了一种用模糊控制和预测控制相结合的复合控制方法。

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Continuous preparation of YBCO superconducting tape on a ag/ ni composited substate by dynamic MOCVD

动态MOCVD法在Ag／Ni复合基体上连续制备YBCO超导带

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Secondly, model for the vertical MOCVD reactor of XiDian University was set up. On the foundation of the model, the flow field, temperature field and growth rate velocity distribution can be simulated.

依照西安电子科技大学立式MOCVD原型建立立式反应室模型，并模拟了反应室中流场、温度场分布和生长速率分布。

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Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD

MOCVD生长GaN薄膜的实时干涉曲线分析

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