LDD

LDD ultra shallow junction can be reachec by low energy and high dose implant.

可以通过低能量,高剂量的等离子注入来实现LDD超浅结(ultrashallowjunction).

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B word of caution: Using the LDD screen will slow down your picture taking ability.

警告的话: 施用LDD屏会侵害电池的寿命,并且会减低拍摄的能力.

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The model LDD 210 H hydraulic tandem vibration roller

LDD210H全液压串联式振动压路机

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The results indicated that LDD and Qiju Dihuang decoction can evidently increase the activities of SOD and GSH Px and apparently reduce LPO in the blood of young mice.

结果表明，六味地黄汤、杞菊地黄汤可明显增强小鼠血中SOD的活性和GSH－Px的活力，使LPO显著降低。

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The LDD MOSFET is a suitable structure for VLSI.

这些优点意味着LDDMOSFET结构在VLSI中 有着广泛的应用前景.

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The behaviors of the Snapback stress in LDD NMOSFET are studied in ultra-short and ultra-thin LDD NMOSFET' s. The avalanche hot holes and electrons together inject into oxide during Snapback stress, much interface states and neutral electron traps are generated.

对超短超薄LDD nMOSFET中的Snapback应力特性进行了研究。Snapback应力过程中雪崩热空穴和电子同时注入栅氧化层，会产生界面态和大量中性电子陷阱。

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Dopant distribution in LDD region is getting closer to substrate surface.

LDD区域中的杂质分布越来越靠近衬底表面.

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The LDD dose change can be used to change working current with certain critical dimension.

它主要是调节在特征尺寸一定的情况下通过改变有效沟道尺寸来改变工作电流的大小.

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A mathematic model of the optimization to take aim at the optimum dynamic balance has been built. The three-roller cold tube-rolling mill on the LDD-12 four-strands has been calculated using the direct-scouting Complex Method.

建立了以最佳动平衡为目标的优化教学模型，并用复合形法对LDD-12四线三辊冷轧管机进行了实算。

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Firstly, this dissertation introduces the concept, makeup and the characteristics of mobile computing, gives the concept of Location Dependent Data ( LDD) and Location Dependent Query ( LDQ) respectively.

本文首先介绍了移动计算的概念、组成和特点，对移动计算环境下的位置相关数据（LDD）和位置相关查询（LDQ）有关的概念进行了总结。

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The behaviors of the channel hot electron ( CHE) stress at high temperature in LDD NMOSFET are studied and it is found that there is a linear correlation between SILC degradation and Vth degradation in NMOSFET during CHE stress.

对LDD nMOSFET中的高温沟道热电子应力特性进行了研究，发现高温沟道热载流子应力中SILC的退化和Vth的退化存在线性关系。

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