FET

The input terminal of an FET.

场效应管的控制栅.

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Some people use the Neumann 47 FET ( condenser ) mic.

一些人用NeumannU47 ( 文物 ).

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Appearing on the flexible on bottom of FET only carbon nanotubes for coating method equipment supplies.

图洋柔性底板上的FET只有 碳纳米惯通道为涂布法变不败摆设耗材.

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The better results are obtained for the C-band FET amplifier designed with measured s parametere.

用测出的s参数设计的C波段场效应晶体管放大器获得了初步良好的结果.

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Diagram of FET on bottom flexible only carbon nanotubes for coating method. NEC data.

图中柔性底板上的FET只有 碳纳米管通道为涂布法形成. NEC数据.

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In this paper, the principle and the application of the FET probe are described.

本文是论述场效应管探头的原理和应用.

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Development of a polyimide film capacitive gate FET humidity sensor

聚酰亚胺薄膜电容栅FET湿度传感器的研制

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The cell-based biosensor using FET array provides a non-invasive way for recording the active potential real time, and it can be reach to a single cell.

基于场效应管阵列的细胞传感器是一种无损测量细胞动作电位的器件，可以定位到单个的细胞，实现实时检测外界电刺激作用下的膜电位的改变。

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Study on Application of FET Inverter Circuit in SMAW Machine

场效应管逆变电路在手弧焊机中应用问题的研究

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With the aid of this type of device structure improvements, Graphene FET are higher switches.

借助此类器件结构方面的改进, 石墨烯FET有望实现较高的开关比.

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PHILIPS main agent distribution of high-frequency, the transistor, FET , the modulation, IR series FET, Schottky.

主要代理分销PHILIPS高频 二 、 三极管 、 场效应管 、 变容管 、 IR系列场效应管 、 肖特基.

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A mean failure rate of less than 10-9/ h for a microwave LN GaAs FET was obtained.

并获得了微波低噪声GaAs FET在室温条件下的平均失效率已低于10~（-9）/h的结果。

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Moreover, the FET pumping and real-time fluid monitoring function allows acquiring a true sample of formation fluid unpolluted by drilling mud which plays an important role in determining the fluid properties of the target stratum and analyzing the fluid component.

此外在目的层取样时所具有的污染流体抽排和地层流体特性实时检测功能保证获取不受泥浆污染的真实地层流体样品，对确定流体性质和分析流体成分起到了重要作用。

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A Method of Modelling and Intermodulation Calculation in Microwave GaAs FET Power Amplifier

微波GaAs FET功率放大器的一种建模与互调计算方法

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A third-order intermodulation distortion ( IMD3) sinker composed of a PMOS FET and a tuned inductor is proposed for linearization of CMOS cascode LNA in this paper.

该文提出了一种由调谐电感和PMOS管构成的3阶互调失真吸收单元来提高线性度。

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FET input chips are less sensitive to this problem.

FET输入级的运放对这个情况就不那么敏感.

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I fet some nausea.

我有点恶心.

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Figure 3 : FET circuit, with waveforms.

图3:分流电路及其波形.

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Study on cationic surfactant FET chemical sensor The development of fiber optical chemical sensor ( FOCS) is an active research area.

阳离子表面活性剂FET化学传感器的研究光纤化学传感器（Fiber Optical Chemical Sensor，FOCS）是近年来发展起来的一种检测方法。

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Fabrication of SnO_2 nano? crystalline? film gate FET gas sensor

SnO2纳米晶薄膜栅FET式气敏元件的研制

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The data show that a 370 MBq injection of FET leads to an estimated effective dose of 3.3 mSv, which is in the range of routine nuclear medicine investigations. The potential radiation risks associated with this study are well within accepted limits.

按一次静脉注射FET注射液370MBq估算，有效剂量为3.3mSv，其值处在常规核医学研究中可接受的有效剂量范围之内。

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In the paper, an improved method for the simultaneous determination of GaAs FET noise figure and available power gain is given a method for the design of loss matching network and quantitative analysis of its loss is also presented.

本文给出了可同时测量GaAs FET噪声系数和资用功率增益的改进方法，以及对有耗匹配网络设计和损耗的定量分析方法。

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The FET gas sensor fabricated with this kind of nanocrystalline film gate is found to be of good selectivity to the ethanol gas at room temperature.

以该薄膜为敏感体采用平面工艺制成的FET式气敏元件在常温下对乙醇蒸汽具有非常好的选择性。

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A GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.

本文介绍了一种环路反馈式场效应管介质稳频振荡器.

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Thin film transistor ( TFT ) is one type of field effect transistors ( FET ).

薄膜晶体管 ( TFT ) 是众多场效应晶体管 ( FET ) 中的一种.

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The Unequiripple Function Type Impedance Matching Network for Microwave Transistor or FET Chip

微波晶体管、场效应管管芯的不等波纹函数型阻抗匹配网络

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Field effect transistors ( FET ) have a advantages over bipolar transistors in many cases however.

然而场效应晶体管 ( FET ) 多时候都比两极晶体管有优势.

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DNA sensor based on FET is researched.

研究了基于场效应晶体管的DNA传感器。

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Through the ingenious cooperation of BIMOS OP amplifier and VMOS FET ( filed effect transistor), making the instrument have higher precision and better performance.

由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。

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FET resistor, a differential amplifier would be needed.

为了控制浮动场效应管电阻, 差分放大器将是必要的.

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