wurtzite

However, as a covalent chemical compound with the wurtzite crystal structure, A1N is not easy to sinter.

然而，A1N是强共价键化合物，烧结活性低，而且A1N很容易水解引入氧杂质。

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ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite.

ZnO是一种具有纤锌矿晶体结构的直接宽带隙半导体材料。

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With increasing pressure, the wurtzite structre was transformed to zinc blende structure at 11.2 GPa.

压力达到11.2gpa时,纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构.

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At first, we introduces the structure and characteristics of wurtzite phase GaN and the full band ensemble Monte Carlo method, and compares the full band Monte Carlo method with the general analytic band Monte Carlo method.

首先介绍了纤锌矿相GaN材料的结构特性和全带多粒子Monte Carlo方法的原理，并将全带方法和常规分析带方法进行了比较。

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The XRD pattern indicates that nanocrystalline ZnO ∶ Eu 3 + has a hexagonal wurtzite structure and is polycrystalline.

X射线衍射结果表明,ZnO∶Eu3+具有六角纤锌矿晶体结构.

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The shallow impurity states in wurtzite nitrides are studied by a variational method.

利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题.

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Studies on the Determination of the Particle's Final States in Simulation of Wurtzite GaN by Full Band Monte Carlo Method

Monte Carlo模拟纤锌矿GaN材料中粒子最终态的确定

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We described in the paper a new type of polishing pill manufactured by using a rensentlysynthesized superhard ceramic powders of wurtzite-type boron nitride ( WBN).

本文描述了用冲击合成方法得到的超硬材料纤锌矿型氮化硼（WBN）制作的一种新型抛光片。

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Numerical calculations on an AlN/ GaN/ AlN wurtzite QWW are performed.

对一个AlN/GaN/AlN纤锌矿量子阱线进行了数值计算。

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Usually ZnO has hexahedron wurtzite structure at the aircondition.

在大气条件下，ZnO具有六方纤锌矿结构。

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The result of the XRD indicated that the production structure wurtzite, which was mixed with hydrocarbon.

射线衍射结果表明,掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构.

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From the XRD analysis , the results reveal that the synthesized ZnO nanoparticles and are wurtzite phases.

从XRD分析结果可知,所合成之氧化锌奈米颗粒及阵列为具纤锌矿结构.

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The raw materials contain two structures of ZnS, which are wurtzite and zinc blende respectively.

常压下纳米硫化锌球壳为纤锌矿结构和闪锌矿结构共存的混相结构.

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AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap, which has wurtzite structure too.

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

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A variational approach is used to study the surface states of electrons semi-infinite wurtzite nitride semiconductors.

电子与表面光学声子相互作用对表面电子态的影响不应被忽略.

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