radiation threshold

The resonance radiation trapping in alkaline-earth metal atomic lasers were investigated according to Holstein's theory. The threshold temperature, ground-state density and resonant level effective lifetime of the resonance radiation trapping were calculated for Ca, Sr, and Ba atomic vapor lasers with different tube radii.

根据Holstein理论研究了碱土金属原子激光中的共振辐射俘获效应，分别计算了Ca，Sr和Ba蒸气激光在不同半径时产生共振辐射俘获效应的阈值温度、基态粒子数密度和共振能级的有效寿命。

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Conclusion 70 Gy can be regarded as reference clinical radiation threshold.

结论临床上可将70Gy作为放射剂量的临床阈值。

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Threshold shift of MOS devices is the main damage caused by total dose radiation effect.

阈值电压漂移是电离辐照总剂量效应对MOS器件产生的主要损伤。

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Through numerical calculation, the relationship between threshold shift of MOS devices and total dose of radiation effect is established, and also verified through simulation by ISE software.

通过数值推导，建立MOS器件电离辐照效应阈值电压漂移量与辐照总剂量之间关系模型，并利用ISE软件模拟仿真辐照过程，对模型进行验证。

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Objective To investigate neurobehavioral impact of electromagnetic radiation on human and mice and to provide reference criteria for threshold limit of electromagnetic radiation in environment.

目的研究电磁辐射对人和小鼠神经行为的影响，为环境电磁辐射限值标准提供参考依据。

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When X(γ) radiation over threshold dosage has been detected, the instrument will alarm and record the state parameters, including date and time happened, radiation lasting time and others at the same time.

该仪器在检测到超过安全剂量的X（γ）辐射时报警，同时对该事件发生的日期、时间、照射持续时间等参数进行记录。

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Results show that, after radiation, the threshold voltage drift of NMOS transistors is larger than that of PMOS devices, which is different from the experimental results in the Co~ ( 60) radiation environment.

实验结果表明，辐照后，与用Co60作为辐射源辐照所做实验结果明显不同的是，NMOS器件的阈值电压漂移幅度远大于PMOS器件的漂移幅度。

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The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.

在室温条件下，研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响，观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。

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Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET

短沟道MOSFET阈值电压辐照增强漂移效应

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Electrons are ejected from the object only when the frequency of the radiation is greater than a certain minimum value, called the threshold frequency.

仅当辐射频率大于某一最小值即极限频率时，物体才会发射出电子。

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We suggest that doses of 700 rad which almost injure all the haemopoietic stem cells may be applied as a threshold dose of bone marrow ( or stem cells from blood and fetal liver) transplantation for treatment of acute radiation sickness in dogs.

因而认为700rad是适宜以移植骨髓（或胚胎肝、外周血造血干细胞）治疗急性放射病的阈剂量。

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