oxide layer

  • oxide layer
  • 释义

    氧化层

纠错 数据更新时间:2026-04-19 20:23:41
1、

The grinding affected layers on bearing surface consist of absorption layer, oxide layer, white layer, overtempering and plastic deformation layer.

变质层由表至里是由吸附层、氧化层、白层及过回火塑性变形层组成。氧化层是Fe与合金元素氧化物组成的混合结构,并存在Si的表面富集。

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2、

The density of oxide fixed charge N_f and the density of trapping states N(?) at the interface between the A, laser-recrystallized polycrystalline silicon layer and the underlying oxide layer have been studied by high frequency and quasi-static state C-V technigues.

我们用常规的高频和准静态C-V技术测量了氩离子激光再结晶多晶硅/二氧化硅界面的氧化物固定电荷密度N f和界面态陷阱密度N(it)。

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3、

copper oxide forms an external oxide layer beyond the alumina-rich layer.

氧化铜形式的外部氧化层以外的氧化铝层丰富.

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4、

The oxide peels off the interface between the alloy and the oxide layer.

氧化物脱落是从合金和氧化铝层的接触面发生的。

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5、

however, this treatment favours the growth of an oxide layer.

然而, 这种治疗有利于增长的氧化层.

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6、
7、

The three layers structure, the metallic layer as the solar control film, the compoud layer of transition metals as the protective layer and the oxide layer to creat reflective colour, is needed to form a perfect solar control coating.

指出了为实现阳光控制作用所必需的三层膜结构&控制阳光的金属膜、保护作用的化合物膜和反射调色作用的氧化物膜。

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8、

Buried Oxide Layer ( BOX )-The layer that insulates between the two wafers.

氧化 埋层 (BOX ) - 在两个晶圆片间的绝缘层.

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9、

The thinner oxide layer means lower voltage requirements for initiating changes in cell value.

薄氧化层是指低电压要求发起变化,在细胞的价值.

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10、

The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.

薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。

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11、

Effect of Oxide Layer on Kinetics of Nitridation

氧化层对渗氮动力学的影响

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12、

The thickness of the oxide layer is analyzed by AES depth profile, and the law of influence of temperature, oxygen pressure and time on the thickness of the oxide layer is studied respectively.

用AES深度剖析研究了氧气氧化层的厚度,并研究了温度、氧气压力和时间对氧气氧化层厚度影响的规律;

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13、

Both dull and free sides of the as-received ribbons were covered with an iron oxide layer.

实验结果表明:原始条带的贴辊侧和自由侧表面均为一层铁的氧化物覆盖.

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14、

Manganese oxide layer forming is a critical technique in producing Tantalum capacitor.

被膜是钽电容器生产的关键工艺。

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15、

Charge in the oxide layer and surface state maximum all-up weight [ loaded condition]

氧化层电荷与界面态最高承载重量〔载荷状态〕

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