mos

Threshold shift of MOS devices is the main damage caused by total dose radiation effect.

阈值电压漂移是电离辐照总剂量效应对MOS器件产生的主要损伤。

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The MOS dynamic shift regisers do not consist of flip-flops , but of inverters.

MOS动态移位寄存器不是用 触发器组成, 而是用反相器组成.

词典精选例句

The synthesize speech which is put out come by low bits rate wideband coding can reach MOS 3.5 by audition test. That indicate the quality of synthesize speech can achieve scheduled request.

经过两种低速率的宽带语音编码输出的广西大学硕士研究生学位论文合成语音，通过听力测试MOS可达到3.5左右，表明合成语音的质量达到预定的要求。

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Wu Kai Sha Station will be the northern terminus of MOS Rail.

乌溪沙站是马铁的北行终点站,位于利安?

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Hot-carrier effect is a major reliability failure mechanism of MOS devices and circuits.

热载流子效应是影响MOS器件与电路可靠性的主要因素.

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Study on high electric field annealing effect in thin gate oxide of MOS structure

MOS结构中薄栅氧化层高场退火效应的研究

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This paper presents a digital temperature and humidity tester with a linear thermistor and a Ta 2O 5& MOS humidity capacitor as sensors, and a 8098 single chip computer as the processor.

本文介绍了以线性热敏电阻和Ta2O5&MOS型湿敏电容为敏感器件，以8098单片机为核心的一种数字式温湿度测试仪。

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A low-voltage ferrite driver IC with power MOS transistors is presented.

介绍了一种集成低压铁氧体驱动器和功率MOS管 的单片集成电路.

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Negative Bias Temperature Instability in MOS Structures at Low Temperature

MOS结构低温负偏压温度不稳定性

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High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated.

深入研究了MOS结构中薄栅氧化层在高电场下的退火效应，对氧化层陷阱电荷的退陷阱机理进行了深入探讨。

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Dey is de shiflesses, mos'ungrateful passel of no-counts livin '.

俺说过多回了,他们全是懒虫, 不识好歹.

飘（部分）

Negative bias temperature instability ( NBTI) effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices.

在PMOSFET上施加负栅压和高温应力后，出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。

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At the though I felt in my pocket for the mos.

想到这儿,我不禁伸手摸了摸怀里的馍.

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It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

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Study on Electronic Property of "Bird's Beak" in MOS Device

MOS器件鸟嘴区电学特性研究

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Breakdown Voltage and Termination Considerations for MOS Power Devices

MOS型硅功率器件的耐压与终端处理

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The company has advanced MOS integrated circuit.

公司拥有先进的MOS集成电路.

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The MOS structure was prepared with as-grown SiO_xN_y film as the gate dielectric, and its electrical properties such as dielectric content, breakdown field and leakage current were investigated by the C-V method.

利用所制备的SiO xN y薄膜作为栅介质层制作了MOS结构，并研究了SiO xN y薄膜的介电常数、击穿电场强度和泄漏电流等电学特性。

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The calculated results by density-functional theory ( DFT) proved that different substituents influenced the thermodynamic energy, molecular configuration and MOs orbitals of univalent porphyrin zinc species and the stability changed consequently.

利用密度泛函理论的计算结果证明不同的取代基影响了正一价锌卟啉的热力学能、分子结构及分子轨道，其稳定性随之也发生了变化。

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This paper proposes a new technique to automatically generate STACK layout for MOS analog cell circuits.

提出了一种新的MOS模拟单元电路的STACK版图 自动生成方法.

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And the result of MOS capacitance test show that induced charge injection can also induce phase transition of vanadium dioxide.

通过测试结果分析发现通过感应电荷注入也可以诱导二氧化钒薄膜发生相变。

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New realization of neural networks is presented by using MOS transistors in current mode domain.

本文提出了采用MOS晶体管 的电流型模拟电子神经网络的新实现.

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A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor ( TMCT ) is presented.

报道了一种新结构的功率栅控晶闸管,称其为槽栅MOS控制的晶闸管 ( TMCT ) .

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An efficient algorithm of test pattern generation for MOS circuits with incomplete scan structure

一个有效的不完全Scan结构MOS电路的测试生成算法

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Prof. of Electrical Engineering : Kiss is N-type, the latch-up phenomenon in MOS.

电机教授: 接吻是一种N型金属氧化物半导体间的闭锁(锁存;闩锁;锁上)现象.

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Extreme-pressure ( EP ) properties 、 anti-wear ( AW ) and friction-reducing properties of mono-dispersed micro-spherical MoS _ 2 ( MS-MoS _ 2 )

当MS-MoS _2和 CC -MoS_ 2在LP中 的添加浓度分别为各自的最佳添加量0.25%和0.5% ( 质量分数 ) 、载荷为400N时,其摩擦系数较 纯 LP分别 降低了 46.9% 和6.3%,磨损 体积 分别降低了 52.1% 和12.0%.

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N-channel enhancement mode vertical D-MOS transistor.

N沟道增强型垂直D -MOS 晶体管.

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MOS transistors can be made using this kind of SiO2 film as the gate.

以此SiO2薄膜作为栅，成功地制出了MOS场效应晶体管。

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A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.

提出了应用于毫米波段的MOS变容管的建模方法.

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An effective way to reduce the leakage power is by means of multithreshold CMOS technique, which can restrain the leakage current by adding a MOS transistor to low threshold circuit.

多阈值CMOS技术是一种降低电路漏电流功耗的有效方法.它通过接入高阈值MOS管来抑制低阈值模块的漏电流。

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