transistor的例句大全

Summarizing the basic structure and fundamental of the thin film transistor liquid crystal display.

概述了薄膜晶体管液晶显示器基本结构与原理。

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The Fundamental and Development of Technicolor Thin Film Transistor Liquid Crystal Display COLOR FILTER FOR TFT-LCD

彩色薄膜晶体管液晶显示器（TFT-LCD）基本原理与动态TFT-LCD用彩色滤光片

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The display principle of Thin Film Transistor Liquid Crystal Display Module ( TFT-LCD Module) and its testing technology are discussed in this thesis.

论文分析了薄膜晶体管液晶显示（TFT-LCD）模块的显示原理及其测试技术，以液晶显示器件驱动原理为基础，利用ARM芯片构建了TFT-LCD模块测试系统。

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The platform adopted Arm processor to extend thin film transistor liquid crystal display ( TFT-LCD) interface, and acquired the subsystem signals of battery, motor and electric controlling unit by controller area network bus ( CAN-Bus).

采用Arm处理器，扩展薄膜晶体管格式液晶显示器（TFT-LCD）接口，以控制器局部网总线（CAN-Bus）方式，采集电池、电机、电控子系统信号。

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Thin Film Transistor Liquid Crystal Display has been widely used in portable electronic devices such as mobile phone and PDA, which are supplied power by battery for advantage of low power, low driving-voltage, non-emissive and portable.

TFT-LCD以其低功耗、低工作电压、无辐射、易于实现大规模集成化生产、轻巧等一系列特点，已经被广泛应用于手机、PDA等由电池驱动的便携式电子仪器中。

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A transistor with a thin gate oxide being driven by too high of a voltage.

一个用薄栅氧化层电晶体被太多的驱动电压高。

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Numerical Simulation of Capacitance Coupled Three-junction Single Electron Transistor Made of High-Tc Superconductor

电容耦合三结高温超导单电子晶体管数值模拟

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Preparation and Characteristics of Organic Semiconductor Static Induction Transistor Using Thin Film Al Gate

薄膜铝栅极有机半导体静电感应三极管的试制及动作特性

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An effective way to reduce the leakage power is by means of multithreshold CMOS technique, which can restrain the leakage current by adding a MOS transistor to low threshold circuit.

多阈值CMOS技术是一种降低电路漏电流功耗的有效方法.它通过接入高阈值MOS管来抑制低阈值模块的漏电流。

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Direct Measurement of Threshold Voltages of Field Transistor Using Transistors with Feedback of Deep Inversion

利用深度反转层反馈晶体管直接测量场效应管阈值电压

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Test Circuit for the Rise Rate of Forward Voltage-of KP Type Transistor Thyratron

KP型晶闸管临界正向电压上升率测试电路分析

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By combining thyristor switch with large power transistor, large current rectangular pulsed laser power supply with stable smooth top is obtained, pulsed current of 80A and top current fluctuation within 2% are achieved.

采用可控硅开关元件和大功率三极管放大元件相结合的方案，得到稳定大电流脉冲方波激光电源，脉冲电流可达80A，平顶电流波动小于2%。

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It is shown that the conducting time of the power converter transistor should not be too short.

实验表明，功率管的导通时间不宜太短。

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However, the time delay in ECL circuit is related with parameters in equivalent circuit of transistor in circum.

而ECL电路的时间延迟是与电路中的晶体三极管等效电路的参数有关。

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Study on the time delay model of the bipolar switching transistor and its loading capability

双极型开关晶体管延时模型和带负载能力研究

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Principle and Analysis of Transistor Delayed Injection and Transit Time Device

晶体管延迟注入渡越时间器件的原理与分析

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Through the low-noise amplifier designed, the spectrum and time figure of the transistor noise at low frequency ( 100mHz~ 1.65Hz) was measured, besides that, the scale invariant range and fractal dimension are calculated with several methods.

利用设计的低噪声放大器，测量出晶体管低频段（100mHz&1.65Hz）噪声的功率谱及时间波形，找出了其无标度区间，并用多种方法计算了分形维。

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Testing on Thermal Characteristics of Pulse Power Transistor under Dynamic and DC Bias

脉冲功率器件直流和动态热特性探测

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It's coefficient of magneto-resistance is Δ R/ R ≥ 9%, the coefficient of collector current amplify is MC> 587% ( in room temperature). The properties of spin transistor increase as the base thickness decreasing.

该薄膜磁阻系数ΔR/R≥9%，全金属自旋晶体管试样集电极电流变化MC>587%（常温），且其性能随基极Ag层厚度减小而增强。

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Measurements for Surface Temperature of a Small Target and Thermal Resistance of Power Transistor

微小物体表面温度测量与功率管热阻测试

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