substrate temperature的例句大全

results show that sin films with a low hydrogen content can be prepared by hwp cvd at a higher rate and lower substrate temperature, and the main bond mode in the deposited sin films is si& n stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

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Effect of the Substrate Temperature on the Formation of SOI Materials by O Ion Implantation

基片温度对氧离子注入硅形成SOI材料的影响

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As substrate temperature continuing rising, sp~ 3 bond proportion gradually decrease.

随着基底温度的继续增加，sp~3键含量逐渐下降。

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results show that sin films with a low hydrogen content can be prepared by hwp cvd at a higher rate and lower substrate temperature, and the main bond mode in the deposited sin films is si& n stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

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results show that sin films with a low hydrogen content can be prepared by hwp cvd at a higher rate and lower substrate temperature, and the main bond mode in the deposited sin films is si& n stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

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The transmittance and reflectivity in the visible region of these films lowed with the increasing of the substrate temperature.

在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。

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In a resistance thermal vacuum evaporator with a special heater ( coolant) holder, which can control the sample substrate temperature, Au and In 2O 3 films were deposited on glass slides by a thermal and an activated reactive evaporation technique, respectively.

用带特殊热（冷）阱的可控制基片温度的电阻加热式真空蒸镀薄膜装置，把吸收透明导电薄膜Au和In2O3分别通过热蒸镀和活化反应淀积在玻璃基片上。

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The effects of substrate temperature, reaction gas pressure, and RF power on the structural and optical properties of the prepared films are studied. Their optimal values are 700 ℃, 2 × 133Pa and 200W, respectively.

实验结果表明，衬底温度、反应气压及射频功率对金刚石膜的结晶习性、表面粗糙度及光透过率均有很大程度的影响，其最佳值分别为700℃，2×133Pa和200W。

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The splashing did not occur in the higher substrate temperature range (> 573 K) and the splat morphology changed to a disk type.

当衬底温度较高时（>573K），溅射不再发生，熔滴的扁平粒子呈现规则的圆盘状；

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The methane concentration and the substrate temperature were studied.

着重研究了甲烷浓度、基体温度等工艺参数对热丝CVD法金刚石薄膜显微结构与性能的影响。

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results show that sin films with a low hydrogen content can be prepared by hwp cvd at a higher rate and lower substrate temperature, and the main bond mode in the deposited sin films is si& n stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

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In addition, the optical loss increases with substrate temperature rising.

此外，随着基板温度的提高，损耗也会有所增加。

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The properties of ZnO film are strongly dependent on preparation techniques which include substrate temperature, oxygen partial pressures ( OPP), annealing process.

ZnO薄膜的光电学性质强烈依赖于其制备的工艺条件，如：基片温度、氧分压以及退火处理等。

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As substrate temperature rises, islands coalesce and grow into larger ones on the surface.

AFM分析表明，薄膜为岛状生长，随温度升高，表面生长岛尺寸增大，岛密度变小。

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The effects of substrate temperature and Na contents in target on properties of ZnO thins films were studied by XRD, SEM and Hall.

通过XRD、SEM和Hall等测试手段研究了衬底温度和靶材中Na含量对ZnO薄膜性能的影响。

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ITO films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature.

低电阻率的ITO膜可以通过提高沉积时的衬底温度或高温退火来获得。

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It can be used as an insulating layer in static electrical micromotor. Influence of the processing parameters, such as substrate temperature, reactant gas ratio and deposition time, on the electrical resistivity and breakdown properties of Si_3N_4 thin films are studied.

通过改变沉积温度、反应气体比、沉淀时间等因素，系统研究了这些沉积工艺参数对Si3N4膜绝缘耐压性能的影响。

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TiN thin film with ( 002) preferred orientation was grown by the DC magnetron sputtering at the condition of pure N_2 reacting gas, 1.6 A of the current of DC sputtering and 500 ℃ of the substrate temperature.

应用直流磁控溅射方法，在500℃的衬底温度、纯氮气的溅射气体、800w溅射功率的条件下制备出（002）择优取向的TiN薄膜。

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It is found that the temperature gradient of solidifying front edge could be reduced by reducing focused lamp intensity and increasing substrate temperature.

发现适当降低聚焦加热灯强度、提高衬底加热温度可以降低固化前沿温度梯度，从而降低亚晶界等缺陷密度。

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The substrate temperature has great influence on the properties of both the SiO_2 films and the SiO_2/ Si interface. The fixed charge density of the SiO_2-Si system is estimated from the C-V curve, the minimum value is about 1.73 × 10 10 cm-2.

SiO2薄膜中固定氧化物电荷密度受衬底温度影响较大，其最小值可达1.73×1010cm-2。

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