p-type的例句大全

ZnO is a new type of short-wavelength light emitting device material, and the key to make use of the ZnO-based optoelectronic devices is to prepare n-type and p-type ZnO films with the excellent properties.

特别是在光电领域，ZnO是一种新型的短波长发光器件半导体材料，制备可控的n型和p型ZnO晶体薄膜是实现ZnO基光电器件应用的关键。

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The electrode is fabricated on n-doped GaAs NWs grown on p-type GaAs substrate.

同时，对在p型GaAs衬底上生长的n型掺杂GaAs的米线制备了电极。

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i-v characteristics of p-type silicon electrode in hf solutions with different concentrations and electrochemical potential transients under galvanostatic condition, which accurately reflect the early-stage nucleation process of ps, were monitored by the electrochemical workstation ( chi660a).

采用电化学工作站（CHI660A）监测p型硅电极在不同浓度HF溶液中的电流-电压特性，记录恒电流情况下硅电极的电压变化。这些曲线可从精确反映多孔硅形成的早期成核过程。

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Study of p-type Quantum Well Terahertz Oscillators

p型量子阱太赫兹振荡器研究

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The smallest unit that supports electron flow in a semiconductor material; a hole in P-type silicon or a free electron in N-type silicon.

在半导体材料中维持电流的最小单元，在P型硅中是空穴，在N型硅中是自由电子。

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Digoxin-Labelled P-type Pili Gene Probe for the Detection of Escherichia coli Strains from Chickens

地高辛标记P菌毛基因检测探针鸡大肠杆菌

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Increase in catalyst concentration or silicon dioxide replacing P-type silicon as substrate could lead to denser SWNTs, shorter SWNTs and decrease in erect SWNTs on surface.

研究表明，催化剂浓度升高或采用二氧化硅替代P型硅为生长基底时，都会导致单壁碳纳米管生长的密度加大，而碳纳米管长度变短且更易贴附基底表面生长；

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NiO is a p-type transparent conductive oxide with typical 3d electron structure.

NiO是具有典型3d电子结构的金属氧化物，也是一种P型半导体材料。

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On the other hand, the production of high-quality, reproducible p-type ZnO remains a great challenge which hinders the development of ZnO-based homojunctions.

另一方面，制备高质量的p型ZnO材料仍是一世界性研究难题，这极大程度上阻碍了ZnO同质pn结器件的发展。

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The result indicates that the first order P-type open-closed loop iterative learning control can implement gait tracking well.

结果表明，一阶P型开闭环学习控制能够很好实现仿生腿对人工腿步态的跟踪。

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For calcium cobalt oxide ( Ca3Co2O6) which is a P-type semiconductor, the thermoelectric properties is as good as other Co-based oxide thermoelectric materials.

Ca3Co2O6是一个P型半导体材料，它的热电性能和Co的其它的氧化物热电材料性能不相上下。

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and the intrinsic semiconductor is configured between the p-type semiconductor and the n-type semiconductor.

所述本征半导体配置于所述P型半导体与所述N型半导体之间。

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the cubic boron nitride ( c-bn) thin films were deposited on p-type si ( 100) substrates by means of radio frequency sputtering.

用射频溅射法将立方氮化硼（C-BN）薄膜沉积在p型Si（100）衬底上，薄膜的成分由傅里叶变换红外吸收谱和X射线衍射谱标识。

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acquisition of low surface recombination velocity on surface of p-type si

p-Si单晶低表面复合速度的获得

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Research on Etching GaN 、 P-type Ohmic Contact and Fabrication of GaN LED

GaN的刻蚀、P型欧姆接触以及LED的研究

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influence of process parameters on the electrical properties of n-type and p-type bi_2te_3-based pseudo-ternary thermoelectric materials by the hot-pressing method

热压工艺参数对n型和p型Bi2Te3基赝三元热电材料电学性能的影响

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first principle studies of p-type zno by codoping and adsorption of srtio_3 surface

第一性原理研究氧化锌的p型掺杂和钛酸锶的表面吸附

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first-principles calculation on codoping structure of p-type zno

氧化锌p型共掺杂精细结构的第一性原理研究

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improved p-type iterative learning control algorithm

改进的P型迭代学习控制算法

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edm of p-type doped diamond thick film

P型掺杂金刚石厚膜的电火花加工

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