on-state的例句大全

After the UV light is turned off, the rate of on-state current decay more slowly than off-state current due to the effect of gate bias voltage. 2.

紫外光照移除后，栅极偏压的作用使得开态电流衰减比关态电流慢许多。

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It eliminates the detection error which produced by the non-linearity of the power MOSFET's on-state resistance and the temperature influence, which insures high detection precision.

消除了功率管导通电阻受非线性和温度的影响而产生的检测误差，检测精度高。

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After pre-HE stress, the generated interface states can reduce the number of holes being injected into gate oxide generated by avalanche process during snapback stress, which causes the MOSFET snapback degradation to decrease in on-state and off-state modes. process. In the process of the E.

在预加热电子（HE）应力后，HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层，使器件snapback开态和关态特性退化变小。

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The Design of an Analog Switch with Low On-state Resistance

一种低导通电阻模拟开关的设计

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Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures

高温、高压LDMOS导通电阻的特性

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Influence of Buffer Layer and Transparent Anode in GCT on On-State Characteristic

缓冲层与透明阳极结构对GCT通态特性的影响

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Modeling on-state Resistance of SOI LIGBT with Uniform Doped Drift Region

漂移区均匀掺杂SOI LIGBT通态电阻模型

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The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current.

该结构能有效地消除侧墙的影响，提高器件的开态电流。

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Temperature Effects on Break-Down Voltage, on-State Resistance& Merit Figure of Power VMOSFET

功率VMOSFET击穿电压和导通电阻的温度效应

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Simulation results show that the doping profile and width of P base region are important to the on-state voltage drop of Gate Controlled Thyristor.

模拟结果表明，P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响。

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The on-state resistances of all diodes increased with the dose, which can be ascribed to the radiation defects.

所有器件的串联电阻都随着辐照剂量的增加而上升。

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The on-state resistance ( Rs) and the reverse current increased with the dose, which could be ascribed to the radiation defects in bulk material.

串联电阻（Rs）和反向电流随着辐照剂量的增加而增加，这是由于电子在SiC材料中引入辐照缺陷造成的。

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The conclusion is that the on-state time of the ESD protection circuit is 380 ns under ESD pulse and the protection circuit does not work in work condition.

结论证明：在ESD脉冲下，该保护电路的导通时间为380ns；

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The results show that the introduction of a buffer layer structure of the GCT can adjust blocking characteristic and on-state characteristic well, and optimize the integrated characteristic of GCT.

模拟结果表明，引入缓冲层的GCT结构能够很好地调节阻断特性和通态特性，使GCT的综合特性得以优化。

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Furthermore, the control units have zero crossing triggering circuit and adopt a novel structure of SCR in parallel with contactor to solve the problem of on-state power loss in SCR.

此外，智能控制单元采用过零触发方式开通晶闸管，并应用先进的晶闸管和接触器并联的机电一体结构，较好地解决了单纯采用晶闸管结构而引起的通态损耗。

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The thyristor can be trigged into the on-state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state.

如果是处于正向阻断状态，只要在门极提供一个短暂的正脉冲，晶闸管就会导通。

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The effect of total doping amount QE of emitting region P on on-state voltage drop VT is discussed and the expression for the relationship between QE and VT is derived.

分析了P发射区杂质总量Q E对晶闸管通态压降V T的影响，导出了Q E与V T的关系式。

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In particular, the combination of the field stop concept with the trench transistor cell results in an almost ideal carrier concentration for a device with minimum on-state voltage and lowest switching losses.

特别是场截止概念与挖槽晶体管单元的结合能产生通态电压最小、开关损耗最低、载流子浓度近乎理想的器件。

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Compared with conventional TG-LDMOS, the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance, and the structure shows excellent RF characteristics.

与传统的槽栅器件结构相比，新结构在相同的漂移长度和导通电阻下，击穿电压提高了30V，并表现出优异的频率特性。

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Based on the mechanisms that on-state resistance of SOI LIGBT is affected, the on-state resistance is divided and modeled mainly into three parts: the channel resistance, drift region resistance and buffer region resistance.

在研究影响绝缘层上硅横向绝缘栅双极晶体管通态电阻物理机制的基础上，将通态电阻分解为沟道电阻、漂移区电阻和缓冲层电阻。

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