1、

Also, the blue shift depends on ion dose, energy as well as the annealing condition.

蓝移的大小与量子阱的宽度,阱距表面深度,注入离子剂量,能量,及退火条件有关。

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2、

The results showed that the DR's DNA double strand break damage caused by heavy ion beams could be repaired through culture, and the repairing time extended as the increment of radiation dose.

结果表明,抗辐射菌经重离子射线照射后所引起的DNA二条链的切断损伤经过培养能被修复;切断的DNA二条链的修复时间随着照射剂量的增加而延长;

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3、

effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

附加电极半径对空心圆管端点附近离子注入剂量的影响

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4、

scientists have proposed a series of solutions, among which ion implantation technology was considered as potential since it was beyond the limit of thermodynamic equilibrium, and could precisely control implantation dose and buried layer thickness.

在众多解决方案中,离子注入技术由于不受热力学平衡的限制、且能比较精确地控制注入剂量和埋层厚度,是未来制备高质量、大尺寸SiC材料的重要方法。

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5、

The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target corner.

注入离子剂量在靶表面的分布不均匀,在边角附近出现峰值;

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6、

Dose Effect in Low and Medium Energy Ion Implantation and Simulation Method

中、低能离子注入中的剂量效应及模拟方法

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7、
8、

Retained dose analysis for nitrogen plasma based ion implantation of square-shaped titanium sample

正方形钛试样表面等离子体基离子注入氮的保留剂量研究

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9、

By the measurement of Rutherford back scattering channel spectrum and random spectrum, a method to choose appropriate dose of ion implantation during the manufacture of semiconductor saturable absorption mirror is given.

通过测量卢瑟福背散射沟道谱和随机谱,掌握了一种可以对制作离子注入型半导体可饱和吸收镜过程中离子注入的剂量进行选择的方法。

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10、

an implanter without ion mass analyzer was used to fabricate thin soi materials by low energy and low dose water ions implantation instead of conventional simox.

采用无质量分析器的离子注入机,以低能量低剂量注水的方式代替常规SIMOX注氧制备SOI材料。

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11、

The effect of chlorination conditions ( temperature, chlorine dose, bromide ion concentration, reaction time) on THMs production was simulated in the laboratory.

在实验室内模拟氯化条件(pH值、温度、投氯量、溴离子浓度、反应时间)对东江下游深圳水库源水氯化消毒副产物THMs产生的影响。

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12、

Preliminary research on dose repe of LIF thermoluminescence dosimeter to irradiation of 49.3MeV/u carbon ion beam

LiF热释光剂量计对49.3MeV/u~(12)C离子束辐射的剂量响应初步研究

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13、

An Empirical Formula for Calculating Threshold Dose of Film Enhanced Adhesion Induced by Fast Heavy Ion Irradiation

一个计算快重离子辐照引起薄膜附着增强剂量阈值的实验公式

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14、

Thermal Annealing Behaviour of high dose~ ( 40) ar~+ ion implanted silicon layers

高剂量的~(40)Ar~+离子注入硅热退火行为的研究

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15、

Method of Dose Calculation for Heavy-ion Cancer Therapy at IMP

IMP重离子治癌中的剂量计算方法

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