1、

As a testing system of ground escape judgement software, the telemetry simulation system of CZ-2F launch vehicle has been successfully used in the mission of launching the first manned spacecraft for manned spacecraft astronautical engineering.

CZ-2F火箭遥测仿真系统作为地面逃逸判决软件的测试系统已经成功地应用在载人航天工程首次载人飞行任务中。

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2、

A thermal couple analysis method and a thermal vacuum test method for CZ-2C/ SD during launching Iridium satellite are described in detail.

介绍了火箭发射卫星过程中星箭热耦合分析和热真空试验两种设计方法,具体介绍了综合应用计算和试验两种方法完成CZ-2C/SD火箭发射铱星任务的热环境和热控设计工作。

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3、

Combining the results of the thermal analysis and the thermal vacuum test, the thermal control design of CZ-2C/ SD is completed satisfactorily.

热分析和热真空试验相结合,圆满完成了CZ-2C/SD火箭的热环境设计任务。

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4、

Strategic Running Diagnosis and Analysis of CZ Software Company in Guangxi

广西CZ软件公司的经营战略诊断与分析

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5、

Cz Crystal Temperature Distribution in the Finite Element Analysis

Cz法晶体生长中温度场分布的有限元分析

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6、

Mechanism of Interaction between Crystal Growth and Crystal Melting in CZ Method

引上法晶体生长和熔化相互作用的机理

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7、

A New Pattern of Recursive Program Transformation& CZ Transformation

递归程序变换的一种新模式一CZ变换

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8、

The Study of Surface Morphology of YAG Single Crystal Grown by CZ Method

引上法YAG单晶表面形态学的研究

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9、

Research on Streak Formation in Growing Single Crystal with Large Size by CZ Method

直拉法生长大尺寸TeO2单晶生长条纹的探讨

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10、

Control of Radiation Defect in CZ Si Radiated by High Energy Particles

高能粒子辐射直拉硅中辐照缺陷的控制

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11、

Development and Applications of the Intelligent Weighing Installation of Model CZ Loader

CZ型装载机智能测重装置的开发与应用

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12、

Appraisal Test of Accelerator CZ Synthesized in New Technology

新工艺合成促进剂CZ的鉴定试验

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13、

Oxygen precipitation is an important subject of defect engineering for CZ silicon.

氧沉淀是直拉硅单晶缺陷工程的重要研究课题。

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14、

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

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15、

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

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16、

The Cz and Bridgman methods are common techniques of crystal growth.

Cz法与Bridgman法是晶体生长中普遍采用的两大技术。

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17、

Thermal Environment Analysis and Test of CZ-2C/ SD Rocket

CZ-2C/SD火箭热环境分析及试验

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18、

Investigation on the Nature of Flow Pattern Defects in CZ-Si Crystals

CZ-Si单晶中流动图形缺陷的本性探究

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19、

Advances in the synthetic technology and application of vulcanization accelerator CZ

硫化促进剂CZ合成工艺和应用

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20、

Growth of Yb: YAG Crystal by Cz method and the Study of the Characteristics

提拉法生长Yb:YAG晶体及其性能表征

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