A Technical Design and Experiment of the Chemical Vapor Deposition of AIN Film
化学气相淀积法合成氮化铝薄膜及其工艺设计
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The technology of epitaxy growth GaN/ Si ( 111) with high temperature AIN buffer was investigated.
本文主要研究采用高温AlN缓冲层外延生长GaN/Si(111)材料的工艺技术。
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Tomorrow's getting harder make no mistake luck ain't even lucky got to make your own breaks.
明天不犯错越来越难。好运甚至不再是好运。会使你受挫。
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Chemical stability of AIN thin films prepared by reactively pulsed laser sputtering deposition
反应式脉冲激光溅射淀积AlN薄膜化学稳定性研究
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