photoluminescence spectra from sige/ si strained layer quantum well structures

1、

oscillator strength of intersubband transition in n type alas/ gaalas quantum well for the normal incident absorption

n型AlAs/GaAlAs量子阱子带间正入射吸收跃迁振子强度

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2、

influence of thermal annealing to the characteristics of algainp/ gainp multiple quantum wells led wafers

退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

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3、

x-ray topography and photoluminescence properties of gaas/ algaas quantum well materials

GaAs/AlGaAs量子阱材料的X射线形貌及其发光性能

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4、

improving the quantum well properties with n-type ingan/ gan superlattices layer

引入n型InGaN/GaN超晶格层提高量子阱特性研究

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5、

an effective computation method for p-type semiconductor quantum well

p型半导体量子阱的有效计算方法

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6、

compared with common soa ( single-electrode soa), the gain and dynamic characteristics of the multi-electrode quantum well soa ( qw-soa) have been greatly improved which enable qw-soa a very wide range of potential application in optical fiber communication.

相比普通SOA，多电极量子阱SOA在增益特性和动态特性方面有望得到改善，它在光纤通信领域有着极为广泛的应用前景。

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7、

tragacanth gum for use in manufactures

制造业用黄蓍胶

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8、

intersubband and intraband transitions of self-assembled quantum wires for the infrared detectors

可用于红外探测器的自组织量子线及其带间和子带间光学跃迁

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9、

the hall conductivity of quantum wires with real magnetic barriers

真实磁垒作用下的量子线的霍尔电导

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10、

shot noise in diluted magnetic semiconductor/ semiconductor quantum wires

稀磁半导体/半导体量子线中的散粒噪声

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11、

study of the equivalent 1d potential of excitions in quantum well wires

量子线的一维等效势模型的研究

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12、

effect of anodization on photoluminescence of gaas/ algaas quantum wires

阳极氧化对GaAs/AlGaAs量子线荧光的影响

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13、

the llp variational approach and the perturbation method are employed to study the polaron effect in a freestanding quantum wire, both the contribution from the bulk-like longitudinal optical phonon modes as well as the surface optical phonon modes are taken into consideration.

分别采用LLP变分方法和微扰方法研究了圆柱形自由量子线的极化子效应，在计算中考虑了类体纵光学声子模及表面声子模的贡献。

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14、

analysis also shows that the perturbation method is better in dealing with the polaron problem in the strongly confining systems such as quantum wires and quantum dots.

分析还发现，对于量子线、量子点等强受限体系，微扰方法得到的结果较LLP变分方法的结果合理。

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15、

the aim of this paper is to investigate fano effect in transport through coupled quantum wire-dot systems.

研究耦合量子线-量子点体系的电子输运过程中的Fano效应，这是贯穿于本论文工作始终的一条主线。

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16、

the ground state energy of strong-coupling polaron in parabolic quantum wires is calculated for the case where the electron interacted with bulk lo phonon and added electric field.

在考虑电子与LO声子相互作用和加电场的情况下，计算了抛物量子线中强耦合极化子的基态能量。

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17、

numerical calculation illustrated that the ground state energy increases with the increasing confinement strength, and decreases with increasing of electric field strength and wire length.

数值计算结果表明：抛物量子线中强耦合极化子的基态能量Eo随约束强度ω0的增强而增大，而随电场强度F和量子线长Z的增大而单调减小。

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18、

the fundamental principle of cl analysis and its applications in research of new materials, such as gan, sic, zno and quantum wires are reviewed.

文章介绍阴极射线发光分析方法的基本原理及其在GaN，SiC，ZnO和量子线等新材料研究中的应用实例。

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19、

likewise, we discuss the stark shift is related to both the electric field and the quantum sizes.

还讨论了在两种极限下，电场方位和量子线尺寸对Stark效应的影响。

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20、

owing to the easy fabrication and clean, sharp interfaces of v-groove quantum wires, there is great potential application in it.

V形槽量子线制备工艺简单，具有优良的界面，因而存在着极大的器件应用潜力，吸引了众多研究者的注意。

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