flip-chip interconnect technology in optoelectronics device packaging

1、

influence of carrier lifetime on silicon-based optoelectronics devices

载流子寿命对Si基光电子器件性能的影响

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2、

the photonic band gaps and modes of high-index core bragg fibers were investigated by superlattice model accompany with plane wave method.

应用平面波法得到了Bragg光纤中光子能带结构；应用全矢量模型分析了高折射率芯Bragg光纤中的模式。

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3、

investigation on the band structures of some al_2cu and crsi_2-type compounds

某些Al2Cu型和CrSi2型化合物的能带结构研究

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4、

semi conducting properties of zno varistor, structure of its energy band and conductive mechanism of grain bounder energy band were analyzed.

分析了ZnO晶粒半导特性、ZnO压敏电阻晶界能带结构及晶界能带导电的机理。

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5、

theoretical study on the electronic structures for the surfaces of nbc solid

NbC固体表面能带和电子结构的理论研究

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6、

the bond lengths and their effects on the electronic energy band structures in the

Ge＿xSi＿（1－x）合金中的键长及其对电子能带结构的影响

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7、

effects of kerr nonlinearity on the band-gap structure of one-dimensional photonic crystals

Kerr非线性对一维光子晶体能带的影响

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8、

analysis on photocatalytic activity and surface energy band structure of ( ag, nd)/ tio_2 nanometer materials

（Ag，Nd）/TiO2纳米材料光催化活性及其表面能带结构分析

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9、

studies of photonic band gap in the face-centered cubic lattice of non-closed-packed hollow spheres

空心球非密堆积fcc结构光子晶体能带结构的研究

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10、

energy band structure and conducting characteristics of ito films

ITO薄膜的能带结构和电导特性

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11、

ab initio band calculations of transition metals doped rutile tio_2

过渡金属掺杂金红石相TiO2能带结构的第一性原理计算

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12、

two-dimensional phononic energy bands calculations by fdtd combined with high-resolution spectral estimation

用FDTD与高分辨率谱估计相结合计算二维声子晶体的能带

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13、

abnormal band structure and optical properties of ga ( in) nas

Ga（In）NAs材料的异常能带结构与光学特性

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14、

a study of field-enhanced non-equilibrium transient in mis structure by using quasi-equilibrium energy-band model

用准平衡能带模型研究MIS结构场增强非平衡瞬态

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15、

studies on connectivity between bonding parameter topological index and f center energy bands in alkaline halides

碱金属卤化物中键参数拓扑指数与F心能带的相关性研究

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16、

that's great! let's go. k: can i bring sam with me? b: ok.

那太好了！让我们去。我能带萨姆和我吗？B：好的。

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17、

a 1.36 ev band bending in surface region is induced by these empty surface states.

空表面态引起n型样品表面能带发生1.36eV弯曲。

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18、

electrical characterization of solid c60/ si heterojunctions rectifying properties, energy-band models, and bias-temperature effect

固体C（60）/Si异质结的电学表征&整流特性、能带模型与温偏效应

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19、

the 3 d band structure of cu under high-pressure

高压下铜的3d能带结构

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20、

gw quasiparticle band structure of base

BaSe的准粒子能带结构

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