Application of a Diode Pumped Laser to the Selective Laser Melting Processing

1、

Green emission and red emission at 552-567 and 678 nm were obtained in the Er~ ( 3+): TiO_2 nanocrystals using 980 nm semiconductor laser as excitation source.

Er~（3+）：TiO2纳米晶在980nm半导体激光泵浦下获得分别位于552-567、678nm的绿色和红色上转换发光。

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2、

all the planes could jam the high-powered signal sent by radar.

这些飞机都能干扰雷达发出的大功率信号.

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3、

the powerful car soon pulled ahead of the local tins.

这台大功率的汽车很快超过了地方汽车.

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4、

The measurement of soft X-ray fluctuations using vacuum photoelectric detectors

用真空光电探测器测量软X射线起伏波形

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5、

Experiment study on the laser dazzling of CCD photoelectric detector

半导体激光器干扰CCD光电探测器的实验研究

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6、

Signal processing circuit of receiving system covert current signal from PIN four-quadrant photo detector to voltage signal.

接收系统的信号处理电路，将四象限光电探测器输出的电流信号转换为电压信号并放大、处理，最终得到能够反映光斑中心在x方向和y方向偏移量的电压信号。

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7、

Resonant Cavity-enhanced Si Photodetectors with Distributed Bragg Reflector

带有Bragg反射镜的谐振腔增强型Si光电探测器

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8、

Optical Field Analysis of the Ge 0 6 Si 0.4/ Si Strained Layer Superlattice Photodetector

Ge（0.6）Si（0.4）/Si应变超晶格光电探测器中的光场分析

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9、

Design platform of photoelectric detector based on PC

基于PC的光电探测器设计平台

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10、

Study on the Reduction of the Dark Current in Si-based Organic Photodetector

降低Si基有机光电探测器暗电流的研究

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11、

Numerical Simulation of Lateral SiGe/ Si Photodetector Fabricated on SOI

横向SOI锗硅光电探测器的数值模拟

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12、

When the beam strikes the CD, the beam is reflected and directed to the photodetectors.

光束到达CD后被反射回来并直射到光电探测器上。

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13、

Research in CMOS-compatible silicon-based photodetector

与CMOS兼容的硅基波导型光电探测器的研究

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14、

The underling importance of the Ge quantum dot resonant cavity enhanced photodetector is discussed and its prospects are offered.

最后对上述内容进行小结，并对Ge量子点共振腔增强型光电探测器的应用前景进行了探讨与展望。

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15、

A Study on the Gain Performance of SiC Ultraviolet Photodetectors at High Reverse Biased Voltage

SiC紫外光电探测器高反压下增益性能的研究

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16、

The Dark Current Characteristics of InGaAs PIN Photodetectors

InGaAs PIN光电探测器的暗电流特性研究

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17、

Si-based Ge Quantum Dot Infrared Photodetectors

Si基Ge量子点光电探测器的研究

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18、

X-ray photoelectron spectroscopy ( XPS) of surface and interface of PTCDA/ ITO in PTCDA/ p-Si organic-on-inorganic photoelectric detector was investigated.

利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析。

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19、

Fabrication and characteristics of Si-based Ge waveguide photodetectors

Si基Ge波导光电探测器的制备和特性研究

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20、

The first chapter is introduction, which mainly introduce the detector used in extreme ultraviolet ( EUV) and soft X-ray band.

论文第一章是绪论，主要介绍了在极紫外和软X射线波段使用的一些光电探测器。

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