Preparation and conductivity of p_2o_5-based non-crystalline copper ionic conductors

  • 五氧化二磷基非晶态铜离子导体的制备及电导研究
  • 来源:互联网摘选更新时间:2026-07-13 02:54:29

  • 重点词汇
  • coppern.铜(币);警察;
  • preparationn.准备(工作);制剂;
  • conductivityn.传导性,传导率,电导率;
  • conductorsn.<电>导体( conductor的名词复数 );售票员;(乐队)指挥;导管(套管的一种);
  • ionicadj.离子的;
  • ofprep. 关于;属于…的;由…制成;
  • andconj. 和;与;而且;于是;然后
  • 相关例句
1、

Determination of Phosphorus Pentoxide Content in Carbonate Rocks by Spectrophotometry

分光光度法测定碳酸盐岩石中五氧化二磷的含量

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2、

Analytical method of P 2O 5 in the oceanic polymetallic nodules

大洋多金属结核中五氧化二磷分析方法

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3、

Rapid Determination of Phosphorus Pentoxide in Extraction Paste by Acid-Base Titration

酸碱滴定法快速测定萃取料浆中五氧化二磷含量

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4、

IFR was synthesized under optimal reaction conditions with molar ratio of dipentaerythritol ( DPE), phosphoric pentoxide, water, and melamine 1/ 2. 5/ 2. 0/ 3. 45, for 4 h at 120 ℃.

通过实验提出了合成该阻燃剂的最佳反应条件为:双季戊四醇(DPE)、五氧化二磷、水和三聚氰胺反应物料摩尔配比为1/2.5/2.0/3.45、反应时间4h和反应温度120℃。

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5、

In the uniformity comparison of preparation p-n junction by phosphorus oxychloride diffusion and by phosphorus pentoxide sublimation, it is more uniformity that p-n junction preparation by phosphorus pentoxide sublimation.

三氯氧磷扩散与五氧化二磷升华制备p-n结的均匀性比较中,用五氧化二磷升华制备出的p-n结要更加均匀。

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6、

As specified in the standard GB/ T 10209.2 2001, the whole process of determination of available P 2O 5 in diammonium phosphate ( DAP) requires about 3 hours.

按GB/T10209.2-2001规定,磷酸二铵(DAP)中有效五氧化二磷的整个测定过程需时约3h。

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7、

The last step was that GM was phosphated by phosphating agent-phosphorous pentoxide ( P205), then hydrolysised, basic neutralized to obtain the final products-PK.

第三步:由GM与磷酸化试剂五氧化二磷进行磷酸酯化反应,而后水解、碱中和,即制得终产物聚醚改性硅氧烷磷酸酯盐(PK)。

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8、

The structure and the acidic properties of H β zeolite were modified with phosphorus pentoxide added by using chemical vapour deposition method.

采用化学气相沉积法,研究了五氧化二磷对Hβ分子筛酸性和孔结构的改性。

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9、

Preparation p-n junction by phosphorus pentoxide sublimation, the most influence on square resistance is reaction time followed by flow and silicon reaction temperature, the least is phosphorus oxychloride diffusion.

五氧化二磷升华制备p-n结,对方块电阻影响最大的是反应时间,其次是气流量和硅片反应温度,P2O5升华温度影响较小。

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10、

Phosphorylation of high fatty alcohol with phosphorus pentoxide was studied with the aid of 31 P NMR spectrum.

采用31p NMR波谱对高碳脂肪醇与五氧化二磷的反应进行了研究,定量地表征了产物混合物中的各组分。

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11、

Sulfur incorporation in diamond was performed by B-S co-doping method via microwave plasma chemical vapour deposition ( MPCVD) technique on undoped Si as substrates. Dimethyl disulfide and boron oxide were the doping sources, which were diluted in acetone.

利用微波等离子体化学气相沉积(MPCVD)技术,以丙酮为碳源,用二甲基二硫和三氧化二硼作掺杂源,在硅衬底上制备了硼与硫共掺杂的金刚石薄膜。

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12、

We use hot-filament-assisted chemical vapor deposition ( HF-CVD) to prepare boron-doped diamond film on Si with B 2O 3. BDD film's growth condition was studied with Raman spectroscopy.

采用热灯丝CVD法在硅上制备金刚石薄膜,采用三氧化二硼制备硼掺杂金刚石膜.利用拉曼光谱分析硼掺杂金刚石膜的生长情况。

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13、

The conclusion showed: the effect of SiO_2 increased the viscosity was stronger than B_2O_3 did, the larger the SiO_2/ B_2O_3, the more the viscosity increased;

结果表明:二氧化硅对粘度的增加作用要比三氧化二硼强,SiO2/B2O3比值越大对玻璃粘度增大的越多;

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14、

Use of Co 2O 3 surface inoculation, composite ceramic shell boned with silica sol and ethyl silicate and vacuum pouring in investment casting for heat resistance alloy was introduced and the results were analyzed briefly.

概括地介绍了高温合金叶片的三氧化二钴表面孕育、硅溶胶硅酸乙酯复合型壳及真空浇注等精铸工艺,并对结果进行了简单的分析和说明。

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15、

Studies on Co_2O_3-Catalyzed Epoxidation of Cyclohexene in the System of Valeraldehyde and Molecular Oxygen

应用分子氧/正戊醛/三氧化二钴体系氧化环己烯的研究

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16、

The Direct Determination of the Noble Metal Element Iridium and Platinum in Al_2O_3 by Emission Spectroscopy

发射光谱法直接测定三氧化二铝中贵金属元素铂铱的含量

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17、

The Development of Self-healing Al_2O_3 Insulating Coating

自修复三氧化二铝涂层研究

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18、

The Catalytic Synthesis of Coumarin in the Presence of Potassium Fluoride Supported by Aluminium Oxide

三氧化二铝固载氟化钾催化合成香豆素

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19、

Study on Measuring Alumina in Chromium ores

铬矿石中三氧化二铝测定的研究

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20、

Condensed Phase Aluminium Oxide Particles Deposit on the Nozzle Throat and Its Theoretical Analysis

三氧化二铝粒子在喷管喉部沉积变化规律的理论分析

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