The Analysis, Design and Performance Research of a Charge Pump Circuit

No built-in charge pump leads to smaller die size and more cost savings.

无内嵌的供给泵，这样就会带来更袖珍的小片尺寸以及更多的开销节省。

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You should keep on dreaming as ever as you can, never giving up as you like when faced with any difficulties.

心中有梦想就要一如既往，不能遇到困难说放就放。

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Please keep on dreaming big dreams.

请怀抱远大的梦想。

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Keep on dreaming. Uh, go away. Yes. Okay.

继续发梦吧，死开，遵命。

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This is Hollywood, always time to dream, so keep on dreaming!

这里是好莱坞，是梦想的地方，继续梦想吧！

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Some dreams come true, some don't-but keep on dreaming.

有些人梦想成真，有些人却没有，但是不要放弃梦想。

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The optical power out of fiber can reach 330 μ W under 25 mA drive current, the sensibility superior to-30 dBm at 155Mb/ s data rate in full duplex, and the crosstalk less than-22 dB.

器件在25mA驱动电流下，出纤功率可达330μW，在155Mb/s速率下，探测器双工灵敏度可达-30dBm，器件光串音优于-22dB。

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The junction temperature of LED has directly influence upon light output efficiency, device life time, reliability, emitting wavelength of LED. With the invention of high-power LEDs, the requirement for drive current has increased significantly, thereby increasing power dissipation.

LED结温高低直接影响到LED出光效率、器件寿命、可靠性、发射波长等。

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By using the quasilinear Fokker-Planck model, radial diffusion effects on the drive current profile and driving efficiency of lower hybrid current drive ( LHCD) in the HL-1M tokamak are studied with anomalous transport of fast electrons taken into account.

本文利用低混杂波电流驱动的准线性理论模型，研究了由于磁场的随机涨落而引起的快电子的反常输运对驱动电流分布和驱动效率的影响。

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The traditional operating method of LD power driver is that the user preset the parameters of drive current such as the rate, pulse width and amplitude. The LD cannot adjust its working parameters according to the variation of its environment with this method.

传统LD驱动电源通常采用电流参数预定输入的方式，其只能输出给定脉宽、重复频率及峰值的驱动电流，这种方式注定其不能随工作环境的变化而做相应调节。

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The device is superior to the conventional LDMOS in the performance indexes of drive current, breakdown voltage, transconductance, gain, cut-off frequency and its process with a few additional complexities still keeps compatible with standard CMOS process flow.

该器件的驱动电流，击穿电压，跨导、增益和截止频率等性能指标明显优于传统LDMOS结构，而且工艺上仍可以与标准CMOS工艺兼容，工艺复杂度增加不大，阈值电压的设计也更加容易。

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The power magnitude and stability of LD output is related to the drive current, LD can be damaged due to voltage surge. So besides making the current value of LD constant, we also must take appropriate means to protect it.

LD的输出光功率大小及稳定性与驱动电流有关，同时，LD还易受浪涌电压而损坏，因此除使注入LD的电流保持恒定外，还应采取相应的保护措施。

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This number can then be used to derive any adjustments to the drive current or voltage in order to keep the flux output ( or the color output of an RGB series of LEDs) inside the visible limit.

我们随后可用这些数值来调节驱动电流或电压，从而确保通量输出（或RGB系列LED的色彩输出）在可见范围之内。

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From the gate charge curve ( V_ GS-Q_G), many parameters can be obtained, such as the capacitances of the device, drive current requirements, the power dissipation and so on.

通过栅电荷曲线（VGS-QG），能导出器件的电容特性，驱动电流大小及能量损耗等相关参数。

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After the optimization of the system, circuit, and layout design, the IC is realized in BCD ( bipolar-CMOS-DMOS) technology, which is able to operate under a very high voltage and drive current.

由于芯片工作中涉及较高电压和较大电流，电路采用BCD工艺（bipolar-CMOS-DMOS）实现，并对系统、电路和版图进行了优化。

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High efficiency push pull output stage on the one hand can provide better characteristics of rail to rail output, high drive current, on the other hand can also works in low voltage supply for its special topology structure.

高效率的甲乙类输出级能提供轨对轨输出摆幅和高输出电流，由于电路具有特定拓扑结构的输出级，因而运算放大器能够工作在低电源电压状态下。

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The experimental results are proved that the 1 hour stability of the drive current control has reached 0.019%, the temperature control deviation has reached ± 0.01 ℃, all the technical qualifications have met the design requirements expected.

通过实验证明，该电源驱动电流的1小时稳定性达到了0.019%，温度控制偏差达到了±0.01℃，各项指标均达到了预期的设计目标。

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External differential quantum efficiency as high as 2.2 and light power output of 2.5? W per facet ( under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

三有源区激光器外微分量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W。

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For the source/ drain and gate electrodes with an overlap, the structure with SiO2 interfacial layer between high-k gate dielectric and substrate is quite effective for increasing the drive current.

对于源漏和栅堆叠的器件，在高k栅介质和硅衬底间增加SiO2界面层，随着SiO2厚度的增加，驱动电流增加。

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This hybrid microcircuit processing was designed with high power LED and constant current diode IC circuit, guaranteed the 3~ 10 W integrated LED operating normally at drive current lower than 100 mA.

将集成功率级LED与集成恒流源电路进行一体化混合集成工艺设计，保证了3～10W的集成LED在低于100mA的驱动电流下正常工作。

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