In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

1、

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

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2、

The light HVDC transmission is a new power transmission technology based on the voltage source converters ( VSCs) and IGBT power semiconductors.

轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。

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3、

Analysis of voltage-current characteristics of LIGBT

横向绝缘栅双极晶体管的电压电流特性分析

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4、

Research on Electrical Overstress on IGBT Module

绝缘栅双极晶体管模块过电应力的研究

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5、

The Basic Research of Alumina Based Self-Flow Castable

刚玉自流浇注料的基础研究绝缘栅双极晶体管基础

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6、

The inverter can be manufactured with the insulation gate bipolar transistor module.

逆变器采用绝缘栅双极晶体管模块制造。

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7、

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

空穴注入控制型横向绝缘栅双极晶体管

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8、

Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection

绝缘栅双极晶体管驱动保护集成电路设计

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9、

Transient Turn-off Fast Relaxation of Complementary Lateral Insulated-Gate Bipolar Transistor

互补型横向绝缘栅双极晶体管的截止瞬态快速弛豫

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10、

An analysis is made on the difference between the wide base, low gain PNP transistors in the IGBT and the conventional high gain PNP transistors. It is shown that the operating characteristics of the IGBT should be described with the ambipolar transport theory.

对绝缘栅双极晶体管（IGBT）中宽基区、低增益pnp晶体管与普通高增益晶体管之间的差异进行了综合分析，结果表明，IGBT的工作特性必须采用双极传输理论来描述。

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11、

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

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12、

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

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13、

An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.

对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。

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14、

VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

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15、

The IGBT full name is Insulate Gate Bipolar Transistor, namely the insulation grid bipolar transistor, it is new semiconductor devices which rapidly develop in recent years.

IGBT的全称是Insulate Gate Bipolar Transistor，即绝缘栅双极晶体管，是近年来迅速发展起来的新型半导体器件。

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16、

By analyzing the dynamic characteristics of welding arcs and the characteristics of IGBT, an electronic analog load of welding arcs was designed and a new experimental method for the dynamic characteristic test of arc welding power source was proposed.

通过分析焊接电弧动特性和绝缘栅双极晶体管（IGBT）特性，设计了焊接电弧电子模拟负载，提出了一种弧焊电源动特性测试的新的试验方法。

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17、

Principle and analysis of charger with IGBT

绝缘栅双极晶体管（IGBT）充电器的原理及分析

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18、

Today however, conversations rarely go beyond shopping and housing.

然而今天, 茶馆的闲聊话题很少超过购物和住房.

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19、

That tea house looks just great in the day too.

这茶馆看起来只是在白天也很好.

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20、

Drinking in the tea house is really popular in my city.

在我住的城市,去茶馆里喝茶很流行.

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