heterostructure

Study on the Spin Transport of Semiconductor Heterostructure Quantum Wire with Spin-Orbit Coupling

半导体异质结自旋轨道耦合量子线自旋输运研究

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SiGe/ Si Heterostructure Optoelectronic Devices

SiGe／Si异质结光电器件

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Simulation of Spin-Polarized Transport in SiGe/ Ge/ SiGe Heterostructure

SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟

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Characteristics of Temperature and Output Saturation in InGaAsP/ InP Double Heterostructure Light Emitting Diodes

InGaAsP/InP双异质结发光管光功率的温度和饱和特性

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The Wide BandGap Sandwith in InP Series Heterostructure Materials and its Effects on Materials Characteristic

InP系列异质材料中的宽带隙夹层和它对材料特性的影响

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Research Progress in Ferroelectric Thin Film/ Semiconductor Heterostructure

铁电薄膜/半导体异质结构的研究进展

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the heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.

从而深化了对异质谷间转移电子器件及其工作机理的研究。

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In order to design the quantum point contact ( QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.

为了设计以半导体异质结构量子点接触（QPC）为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。

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SiGe/ Si heterostructure optoelectronic devices and their optoelectronic integrated circuits ( OEIC) are attractive research domains in the world.

SiGe／Si异质结光电器件及其光电集成（OEIC）是硅基光电研究的一个非常引人注目的领域。

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After GaAs NWs growth, axial and radial heterostructure can be realized by tuning growth temperature.

在生长完GaAs纳米线后，通过改变生长温度可以实现轴向、径向的异质转变。

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The normal and anormal temperature characteristice of photoluminescence spectrum for InP based multilayer heterostructure materials are reported in this paper.

本文报告了InP系列多薄层异质结构材料变温光致发光（PL）谱的正常及异常温度特性；

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Tunneling diode is one of the promising nano devices based on energy band engineering of Si/ SiGe heterostructure. Because of the negative differential resistance revealed by its current-voltage ( I-V) curve, tunneling diode can be used to design many kinds of complicate integrated circuits.

隧穿二极管是一种很有前途的基于带隙工程的异质结构量子器件，其电流电压（I-V）曲线中所呈现的微分负阻特性能够用于开发多种不同的电路功能。

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Recent studies on ferroelectric thin film/ semiconductor heterostructure are discussed in this paper.

综述了铁电薄膜/半导体异质结构研究近年来的新进展。

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Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.

研制这种分布反馈双异质结构激光器要求在皱折层上生长出单晶层.

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The polaron ground state in asymmetric double heterostructure ( ADHS) is studied.

研究了半导体非对称双异质结（ADHS）中，极化子的基态性质。

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information query method and tactic for tpi heterostructure uniform index system

TPI异构统一检索系统的信息检索方法与策略

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Therefore, this paper explored to use the finite element analysis tool ANSYS to research stress and strain distributions and influencing factors for a uniaxial strained Si MOS device with typical SiGe source-drain structure and a biaxial strained Si MOS device with strained Si/ SiGe heterostructure, respectively.

本文探索了运用有限元分析工具ANSYS研究具有典型SiGe源漏结构的单轴应变硅MOS器件和应变Si/SiGe结构的双轴应变硅MOS器件的应力应变分布情况和影响因素。

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A novel heterostructure intervalley transferred electron effect is discovered through the quantum confine, band mixing and resonant tunneling in GaAs/ AlAs quantum well, by using which a high efficient electron population controller with high location precision is fabricated.

从GaAs/AlAs量子阱的量子限制、能带混合和隧穿共振中发现了新的异质谷间转移电子效应。用它制成了定位精度高的高效谷间电子布居控制极。

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study of operation mode for heterostructure intervalley transferred electron devices

异质谷间转移电子器件工作模式的研究

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As a powerful rival of conventional Si-based structure, the ferroelectric-semiconductors with heterostructure have a great application potential in modern integrated ferroelectrics-based devices.

铁电-半导体异质结构作为传统Si基结构的有力竞争者，在现代集成铁电器件领域的应用越来越广。

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Si based heterostructure materials, as the second generation of Silicon, are more and more attractive, so Si based optoelectronic integrated circuits ( OEIC) as well as Si based optoelectronic devices become the key research projects over the world.

作为第二代硅，Si基异质结材料为世人所嘱目，Si基光电子器件及光电集成（OEIC）是当前世界范围的热门课题。

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The structure of SiGe/ Si heterostructure devices and their performance, applications, and OEIC are reviewed in this paper.

综述了SiGe／Si异质结材料的基本性质，SiGe／Si异质结光电器件的结构、性能、应用及其光电集成。

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The Monte Carlo approach is utilized to study spin-polarized transport in SiGe/ Ge/ SiGe heterostructure.

利用蒙特卡罗方法对SiGe/Ge/SiGe异质结构的自旋极化输运特性进行了模拟研究。

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The coaxial TNTs@ Cu2O heterostructure exhibited obvious optical absorption and visible light responses under visible light illumination.

TNTs@Cu2O同轴异质结在可见光的照射下有明显的光吸收和光电流响应。

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A type of photonic heterostructure containing left-hand materials is investigated.

研究了一种含左手材料的光子晶体异质结构的窄通道窄角度缺陷模。

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