ecr

Based on the model , research of the steady control response of SA 349 baseline ECR is conducted.

以此为基础, 对SA349基准电控旋翼的稳态操纵响应进行了计算分析.

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Oxygen ECR/ RP plasma etches diamond successfully with an etch rate up to 8 μ m/ h. The etch rate and surface morphology are influenced by biasing frequency and self biasing voltage.

在射频偏压辅助下，氧等离子体成功地对金刚石膜进行了刻蚀，刻蚀速率最高可达8μm/h，偏压频率和直流自偏压大小均会影响刻蚀速率和刻蚀表面形貌。

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With these advantages, Microwave ECR plasma finds number of applications in the areas of etching technologies, thin film deposition and plasma source.

建立了ECR微波等离子体源离子输运的平板和圆柱模型，对离子历经的空间区域的输运过程进行了数值研究。

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Deposition of High Quality GaN Film Under High ECR Plasma Density?

在高ECR等离子体密度下沉积高质量氮化镓薄膜(英文)

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The fourth phase, Commenting on ECR, examines the ECR from with regard to its impact on topics such as prototyping and certification.

第4个阶段Commenting on ECR就ECR对原型制作和认证等主题的影响进行检查。

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Methods: Two widely used adult attachment measurements& Relationship Questionnaire ( RQ) and Experiences in Close Relationship Inventory ( ECR)-are administered to 50 surgery patients in a hospital.

方法：采用两种常用的成人依恋量表&关系问卷（RQ）和亲密关系经历量表（ECR），对住院接受非肠道手术的50名患者进行依恋类型的测量。

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An intense ECR ion source for ADS ( accelerator driven sub-critical system ) is described.

介绍了正在研制的一台强流ECR离子源.

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The ECR plasma in the downstream region has fine radial uniformity.

下游II区的等离子体具有良好的径向分布均匀性。

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Study of Magnetic Field Control Type ECR Sputtering Method Used Vaccum Waveguide

真空波导磁场控制型ECR溅射法的实验研究

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emittance measurement of highly charged ion beams extracted from ecr ion source using electric sweep scanner

电偏转扫描法测量高电荷态ECR源发射度

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A Preliminary Research on ECR of Soil and Water Conservation Forest

水土保持林有效覆盖率（ECR）的初步研究

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From the PLM sample, Monitor collects the useful information, such as the number of ECR status inquiry transactions in one month, the number of ECRs by status, and so on.

在PLM示例中，Monitor收集有用信息，比如一个月内ECR状态查询交易的数量、某个状态下的ECRs数量，等等。

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Ti-O film was prepared by microwave-electron convolute resonance ( MW-ECR ) magnetron filter arc deposition process.

采用微波电子回旋 共振 磁过滤弧设备制备钛氧薄膜.

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The silicon thin films on glass substrate were prepared using microwave ECR source enhanced magnetron sputtering.

利用微波ECR等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜.

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With the support of information technology, there appeared the EDI technology, the ECR and JIT systems, by which the international logistics can process the trade documents most efficiently and satisfy the customers with the lowest costs.

有了信息技术的支持，才有了EDI技术，有了ECR和JIT系统，才能使国际物流以最高的效率处理贸易单据，以最低的成本满足客户的需求。

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Then the flight dynamics model of the ECR helicopter was constructed.

以此为基础,建立了电控旋翼直升机的飞行动力学模型.

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Conclusion: The ECR-R is psychometrically acceptable and may be applied to study attachment of Chinese adolescents.

结论：ECR-R适用于中国青少年依恋心理研究。

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ZrN thin films were prepared on 45 # steel by using ECR-microwave plasma source enhanced deposition.

利用ECR - 微波等离子溅射沉积技术不同偏压下在45 # 钢基体上制备了ZrN薄膜.

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The analysis results showed that the ECR helicopter had good trim and control characters, and pre-index angle and blade root spring stiffness had distinct effect.

结果表明，电控旋翼直升机具有与常规直升机类似的配平和操纵特性，桨叶预安装角和桨根扭簧刚度这两个参数对其影响显著。

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The numerical methodresolving the wave propagation and absorption of the electron cyclotron resonance ( ECR ) is proposed.

介绍了电子回旋共振 ( ECR ) 波的传播与吸收的数值求解方法.

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the test results showed that the control effect of the ecr flap collective and cyclic was just like the traditional rotor. while in forward flight tests, obvious cyclic effect due to flap collective deflection could be observed.

试验结果表明，电控旋翼的襟翼总距和周期变距操纵效果与常规旋翼类似，电控旋翼完全可以取代传统的自动倾斜器操纵系统实现旋翼操纵。

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Study on Thin Film Growth Temperature by ECR-PEMOCVD Based on the Double Thermocouples

基于双热电偶校准ECR-PEMOCVD薄膜生长温度分析研究

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The linear ECR microwave plasma source is consist of microwave source, coaxial line waveguide, grounded grid electrode and magnetic field coil outside the vacuum chamber.

线性ECR微波等离子体源由微波源、同轴线波导、接地栅网电极和真空室外磁场线圈构成。

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According to the temperature parameters of growth system for semiconductor thin film, a method to calibrate the thin film growth temperature by ECR-PEMOCVD based on double thermocouple is introduced.

通过简单叙述Ⅲ族GaN基氮化物薄膜，以及了解半导体薄膜生长系统的温度变化情况重要性，提出了基于双热电偶校准薄膜生长装置ECR-PEMOCVD温度的方法。

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Investigation of a cavity COUPLING-MULTIPOLE ECR source for application in semiconductor processing

用于半导体加工的腔耦合－磁多极型ECR源的研究

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