cmp

A Study on Mechanisms for Chemical Action of Tungsten Plug in CMP

钨插塞在化学机械抛光中的化学作用机理研究

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The tightly-coupled nature of the CMP allows very short physical distances between processors and memory and, therefore, minimal memory access latency and higher performance.

CMP紧密耦合的本质使处理器与内存之间的物理距离很短，因此可提供最小的内存访问延迟和更高的性能。

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Then its CMP properties on hard disk substrate with nickel-phosphorous plated was studied.

进而研究了其在镍磷敷镀的硬盘基片CMP中 的抛光特性.

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This process goes round and round, and copper CMP was finished.

这样新鲜的铜表面在浆料的作用下继续被氧化，机械磨除、络合，反应产物被湍流的浆料带走，周而复始，完成铜的CMP过程。

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Zone Back pressure Control Using for Vacuum Carriers in CMP

CMP加工中的真空吸盘区域压力控制技术

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After the 2.2.15 cell line was planted 24 hours, CMP and Alcilovir ( ACV ) were added.

将2.2.15细胞株种板24h后, 分别加入羧甲基茯苓多糖和阳性对照药阿昔洛韦 ( ACV ) .

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Zero offset ( ZO) section, which is just the goal of CMP stacking in conventional processing, is an important intermediate result in seismic reflection imaging.

零炮检距剖面是地震反射成像过程中重要的中间成果，常规处理中的共中心点（CMP）叠加的目的正在于此。

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A New Method to Code Non-circle Molecules: CMP Algorithm

对无环分子编码的一个新方法：CMP法

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Recent investigation shows that CeC & gt ; 2 nanoparticles can be used as CMP slurry to polish IC chip.

最新研究表明,纳米 CeO _2可用于集成电路芯片加工的化学机械抛光(CMP)浆料.

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Study on Flows and Temperature Distribution of CMP Process; Effect of EMBr on Fluid Flow and Temperature during Continuous casting

化学机械抛光的流动性能和温度场的计算电磁制动对结晶器流场以及温度场影响的研究

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The CMP process is also used to control film thickness and removal of barrier layers.

CMP技术也用于控制薄膜厚度及剥离隔离层.

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A typical CMP ( Chip Multi-Processor) architecture often has a shared L2 cache and lower storage hierarchy. Sharing the L2 cache allows high cache utilization and avoids duplicating cache hardware resources.

在典型的多核处理器（CMP，Chip multi-Processor）体系结构中，多个处理器核共享二级高速缓存，这种方式不仅能够提高高速缓存的利用率，还能避免存储器硬件资源的浪费。

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Therefore, the influence parameters aiming at CMP process and their effects to polishing result need to be researched deeply.

抛光垫作为CMP系统的重要组成部分，其性能直接影响CMP过程及抛光效果。

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Under the optimal conditions, about 45.7 % CMP was transformed to CTP.

在最优化条件下, 转化率达45.7%.

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It is noted that there is a thin fluid film between the loaded asperities and the wafer being polished in CMP process, thereby a flow system with nano scale film is formed in.

在简述化学机械抛光技术的基础上，提出化学机械抛光过程中，受载的粗糙峰和被抛光的晶片表面之间存在一纳米量级的薄流体膜，形成了纳米级薄膜流动系统。

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Mathematical models were developed to simulate particle reduction in CMP slurry distribution systems.

为模拟cmp磨料 分配系统的粒子减少开发了数字模型.

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For CMP gather seismic data, in common midpoint-half offset distance, the prestack double square root operator could be used to continuate and strip layer by layer.

对于CMP道集地震数据，在共中心点-半偏移距中，可以利用波动方程的叠前双平方根算子，实现延拓，进行层层剥离。

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The chemical reaction by organic alkali with by hydroxide radicle and double amidocyanogen was analyzed in Cu-CMP process.

分析了带有羟基和双胺基的有机碱在Cu-CMP过程中的化学作用。

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However, Dain Sundstrom has been busy closing issues, including initial implementations of the automatic schema creation for CMP.

但是，Dain Sundstrom已经在忙于解决问题，包括为CMP自动创建模式的初始实现。

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Research on CMP power estimation model Quantitative Evaluation of the Cryptographic Block's Resistibility to Power Analysis Attack at Different Design Level

单芯片多处理器结构功耗评估方法研究不同设计层次下密码运算部件抗功耗攻击能力量化评估技术

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The rates of sensitivity to aminopenicillin ( AMP ) , chloramphenicol ( CMP ) , kanamycin ( KM ) , complex sulfamethoxazole-trimethoprim ( COS ) , gentamicin ( GN ) , neomycin ( NM ), tobramycin ( TOB ) , amikacin ( AKN ) and norfloxacin ( NOR ) were high, between 84.4 % and 95.5 %.

对链霉素、痢特灵 、 羧 苄青霉素及 四环素 的耐药率较高, 在129%～457%之间, 对红霉素的耐药率高达949%.

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Design and Implementation of BCI Parallel Algorithm on CMP

基于CMP的脑机接口并行算法的设计与实现

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The presented parallel algorithms can be referred in designing CMP system and optimizing other applications.

这些算法的提出,为今后CMP系统的设计以及其他应用在CMP体系结构上的并行优化提供了参考.

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The tsinghua university project of embedded microprocessor design is a major national 863 program; CMP is its extended project.

清华大学嵌入式微处理器芯片设计为国家重点863项目，单芯片多处理器设计为项目的一个延伸。

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The major problem in Cu CMP is dishing, serious dishing will cause the yield loss.

铜化学机械抛光是近些年发展最快的一种工艺,铜碟形是铜化学机械抛光工艺中的主要问题之一.

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The Chemical mechanical polishing technique in the field of semiconductor industry was introduced.

介绍了半导体工业中蓬勃发展的化学机械抛光(CMP)技术.

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Objective To review the experience of surgical intervention in the congenital multicystic pulmonary ( CMP).

目的评价外科手术治疗先天性多囊肺的临床效果。

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Study on the CMP Property of GaAs Wafer Using Nano Cerium Dioxide Abrasive

纳米CeO2磨料对GaAs晶片的CMP性能研究

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Tightly-coupled multiprocessing refers to chip-level multiprocessing ( CMP).

紧密耦合多处理指芯片级多处理（CMP）。

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Silicon dioxide nanoparticles have been widely used in chemical mechanical polishing ( CMP), coating material, rubber, binding agent, biology, iatrology, catalyst and other fields for their excellent properties.

纳米SiO2以其独特的性能已广泛地应用于化学机械抛光（Chemical Mechanical Polishing，CMP）以及涂料、橡胶、粘合剂、生物、医学、催化剂等其他众多领域。

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