amorphous silicon

The design and fabrication of hydrogenated amorphous silicon thin film UV detector

氢化非晶硅薄膜紫外线探测器的设计和制备

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Thermal and Optical Analysis of Amorphous Silicon Micro-Bolometer

非晶硅微测辐射热计热学和光学分析

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Transient Photoconductivity of Hydrogenated Amorphous Silicon Studied by Using Pulse Laser

用脉冲激光研究氢化非晶硅的瞬态光电导

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Amorphous Silicon Flat-Panel X-Ray Detector Digital Imaging System

非晶硅X线平板探测器数字影像系统

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Amorphous Silicon and Amorphous Silicon Camera Tube

非晶硅和非晶硅靶摄像管

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Aluminum Electrode in Amorphous-Silicon Thin Film Transistor Matrix Circuit

薄膜晶体管矩阵电路中的Al电极

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The structure, preparation and properties of amorphous silicon ( a-Si) material were de-scribed. The application of a-Si in sensors, such as photodiode, colour sensor, X-ray sensor and stress sensor etc.

叙述了非晶硅半导体的结构、制备方法及特性，介绍了非晶硅在制作光电传感器、色敏传咸器、放射线（X射线等）传感器及应变传感器等方面的应用。

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In this paper, a channel thermal impedance model for amorphous silicon thin film transistor is derived from a system of coupled energy equation, heat flowing equation and boundary conditions.

基于能量方程、热流方程和边界条件，本文推导出非晶硅薄膜晶体管的沟道热阻模型；

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The company also uses triple-junction amorphous silicon cells, and its modules be attached to roofing materials.

这家公司也使用了三结非晶硅电池, 并且它们的电池也能铺设在屋顶上.

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Technical Development Status and Trends of Amorphous Silicon Thin-film Solar Cell and Production Equipment

非晶硅薄膜太阳能电池及生产设备技术发展现状与趋势

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This paper deals with the measurement of conductivity and thermoelectric power of amorphous Silicon in the temperature range from 77 ° K to 470 ° K.

本文测量了从77°K到470°K非晶硅的电导率和温差电动势率随温度的变化。

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In this paper the practical structure of amorphous silicon thin film transistor-based uncooled infrared detector is considered, two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of optical admittance matrix method.

针对非晶硅薄膜晶体管室温红外探测器的实际结构，提出了两种计算红外吸收率的数学模型，并结合光学导纳矩阵法研究了它的光学特性。

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For an undoped and slight phosphorus doped hydrogenated amorphous silicon ( a-Si: H) film prepared by activated reactive evaporation, this paper points out the dependence of its photoconductivity on temperature and light intensity.

本文报告了用掺杂和轻度磷掺杂的活性反应蒸发，制备氢化作品硅的稳态光电导对温度及光强的依赖特性。

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Hydrogenated amorphous silicon thin film p I n photosensor for ferroelectric liquid crystal optically addressed spatial light modulators

铁电液晶空间光调制器氢化非晶硅薄膜p－i－n光敏层的研究

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The great progresses on device physics, manufacturing process, mass production and application on amorphous silicon solar cells were summarized.

总结了非晶硅太阳电池在器件物理、制造工艺、大规模生产和应用方面所取得的重大进展。文章分析了非晶硅太阳电池作为空间能源系统技术上的主要优势；

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At the time, the deal stood out not only for its size but also its embrace of amorphous silicon thin film technology, which had been largely abandoned outside China because of the low ratio at which it converted solar energy into power.

当时，这笔交易令人瞩目的除了规模以外，还有它对非晶硅薄膜技术的拥抱；此前这种技术在中国以外基本上被放弃，因为它将太阳能转化为电力的比率太低。

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The result shows that the amorphous silicon flat-panel detector system has better performance.

比较病人的照射剂量和胸片的得分,得到的结论是,非晶硅平板探测器的表现要好一些.

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Simulation of reaction yield curve and boron depth profiling in amorphous silicon films

核反应产额曲线的模拟与非晶硅薄膜中硼的深度分布研究

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PLED ( polymer light emitting diode) and a-Si TFT ( amorphous Silicon thin film transistor) technology have made great progress in the past few years. Combination of two technologies is expected to be the mainstream of future flat televisions.

近年来，PLED（聚合物发光二极管）和a-Si TFT（非晶硅薄膜晶体管）技术取得了巨大进展，两者的结合有望成为未来平板电视的主流。

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Increasing aluminum depositing temperature may make amorphous silicon film crystallize easily annealed at650 ℃.

在650℃的退火温度下增加铝的沉积温度可显著提高非晶硅的晶化效果。

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For anode film, the main attention is paid to the substitutes of lithium metal, such as nitride, oxide of tin metal and amorphous silicon thin-film, in order to gain better cyclic capability.

阳极膜方面以对锂金属替代物的研究为主，比如锡的氮化物、氧化物以及非晶硅膜，研究多集中在循环效能的提高。

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The utility model relates to an amorphous silicon solar control terminal box, which belongs to the technical field of photovoltaic solar energy.

本实用新型涉及一种非晶硅式太阳能控制接线盒，属于光伏太阳能技术领域。

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When SC & gt; 1 %, the conductivity decreased because the fraction of amorphous silicon in materials increased.

SC & gt; 1%, 材料的电导率由于材料中非晶成分的增多而减小.

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High quality amorphous silicon films fabrication by hot wire chemical vapour deposition technique

用热丝法制备优质稳定非晶硅薄膜的研究

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Study of AC Resistively of Hydrogenated Amorphous Silicon Photoconductive Layers

非晶硅光电导层交流电阻率的研究

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The developing trend of X ray testing technology is to use the amorphous silicon flat panel detector(α Si FPD) instead of film screen images.

基于非晶硅面阵探测器的检测技术代替胶片成像已成为今后射线检测的发展方向。

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The technical properties of a new generation of X-ray sensitive detectors& amorphous silicon ( a-Si) flat-panel detectors were introduced. The new detectors could be in lieu of the usual image intensifier in X-ray real-time radioscopic ( RTR) system for inspecting welds or castings.

介绍非晶硅（a-Si）平板探测器的技术特性，及其取代常用的图像增强器在焊缝和铸件的工业射线实时成像（RTR）检测中的应用。

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These advantage make PIN amorphous silicon thin film solar cell the most promising solar energy battery in the 21st century.

这些优点使其成为21世纪最有前途的太阳能电池之一。

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Depth profile investigation for the hydrogen content in the hydrogenated amorphous silicon

非晶硅a-Si：H膜中氢含量的深度分布研究

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It researches the digital radiography technology based on the amorphous silicon flat panel detector.

研究了基于非晶硅面阵探测器的对焊缝数字射线检测技术.

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