ambipolar

On the base of the copper vapor laser kinetic model the thermal diffusion coefficient for the metastable copper species and the ambipolar diffusion coefficient for electrons are analyzed.

结合铜蒸气激光器动力学模型对铜蒸气激光器动力学过程中的铜亚稳态粒子热扩散去激发及带电粒子双极扩散进行了分析。

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Finally, through a long-term research, we had decided to use a method called the multi-target control which is based on the ambipolar SPWM control and the PI adjustment.

通过长时间的研究，最终确定了采用在双极性SPWM控制和PI调节的基础上加以多目标控制的控制策略。

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Removal of chlorobenzene and toluene by dielectric barrier discharge ( DBD) of ambipolar pulse high voltage

双极性脉冲高压介质阻挡放电降解氯苯和甲苯

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An analysis is made on the difference between the wide base, low gain PNP transistors in the IGBT and the conventional high gain PNP transistors. It is shown that the operating characteristics of the IGBT should be described with the ambipolar transport theory.

对绝缘栅双极晶体管（IGBT）中宽基区、低增益pnp晶体管与普通高增益晶体管之间的差异进行了综合分析，结果表明，IGBT的工作特性必须采用双极传输理论来描述。

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A steady state plasma is maintained by electromagnetic field and ambipolar diffusion of charged particles is caused by electrostatic field of space charge.

放电为磁场激励型，稳定的等离子体由电磁场所维持，空间电荷产生的静电场引起荷电粒子的双极扩散。

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The influence of thermal diffusion on metastable copper density and the ambipolar diffusion on electron density is quantitatively analyzed.

定量地给出了粒子热扩散项对铜亚稳态粒子密度及电子的双极扩散对电子密度的影响。

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The findings of this work provides a general guideline for designing stable ambipolar and n-type organic semiconductors materials.

这一结果为我们设计合成稳定的n型与双极性有机半导体分子提供了指导。

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Ambipolar Diffusion Length in Semi insulating GaAs

半绝缘GaAs中的双极扩散长度

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The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

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The ambipolar diffusion coefficient of charged copper species in copper vapor laser is theoretically deduced.

推导了铜蒸气激光器带电粒子的双极扩散系数。

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This paper simulates and analyses the torque pulsation because of the modulation frequency and speed variation under ambipolar pulse width modulation;

本文对双极性调制的无刷直流电动机仿真，分析了转速和调制频率对转矩影响；

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Comparing the test results of working frequency interflow high voltage and monopolar pulse high voltage, showed that highest removal efficiency was gained with ambipolar pulse voltage;

与工频交流高压、单极性脉冲高压的试验结果比较表明，双极性脉冲高压取得了最高的降解效果；

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An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.

对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。

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