zns的例句大全

The ZnS nanowires with diameters of tens of nanometers are formed in the lower temperature zone of 720-670 ℃.

而在720～670℃温区，产物形貌为直径约几十纳米的ZnS纳米线。

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The thermodynamic process of acid pressure leaching of high iron sphalerite is studied and three ε-pH figures of ZnS-H_2O system, FeS-H_2O system and ZnS-FeS-H_2O system at 150 ℃, 1 MPa have been drew, respectively.

对高铁闪锌矿高压酸浸的热力学过程进行了研究，并绘制了150℃、氧气压力为1MPa时，浸出体系中ZnS-H2O系、FeS-H2O系、ZnS-FeS-H2O系的电位-pH图。

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First, this study compares thick source ZnS alpha-counting calibration results of the photomultiplier tube ( PMT) high voltages and thresholds calibrated by the oscillograph with those by different sources.

利用不同标定源对美国Daybreak582、583型低本底厚源ZnSA1pha计数仪光电倍增管高压（HV）和积分甄别器阈值电压（DISC）进行了标定，并与示波器标定结果进行了对比。

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The Local Electric Field in ZnS: Mn Thin Film Electroluminescence Devices

ZnS：Mn薄膜电致发光器件中的局域电场

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The excitation process of TM ion in zns: tm thin film electroluminescence

ZnS：Tm薄膜电致发光的激发过程

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Using thioacetamide as precipitator, the ZnS/ Al composite particle was prepared.

另以硫代乙酰胺为沉淀剂，制备了ZnS/Al复合粒子。

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Photocatalytic Performance of Sodium Thioglycolate Modified ZnS Synthesized by Room Temperature Solid Phase Method

固相反应法合成的巯基乙酸钠修饰ZnS的光催化性能

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Third harmonic of ps laser in a ZnS thin film waveguide

ZnS光波导中微微秒激光的三次谐波

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Structural Analysis of ZnS Thin Film Prepared by Thermal Evaporation

热蒸发制备的硫化锌薄膜的结构分析

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Technic of annealing ZnS: Mn thin films deposited by thermal evaporation in sulfur saturated vapor was described.

本文介绍了电阻蒸发ZnS∶Mn薄膜在硫饱和蒸汽压下进行热处理的工艺。

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The study shows that the morphology and diameter of ZnS nanostructures synthesized by thermal evaporation correlate closely with the growth temperature of ZnS nanostructures.

分析表明：ZnS纳米结构的形貌和直径与纳米结构的生长温度有关。

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In this paper, we report the photoluminescence from high quality nanocrystalline ZnO thin films. The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique.

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

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Properties of ZnO Prepared by Thermal Oxidation of ZnS at a Low Temperature

ZnS低温热氧化制备ZnO薄膜及其物性的研究

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Preparation and optical performance study of ZnS/ CdS single offset superlattice

ZnS/CdS单带差超晶格薄膜的制备及光学性质研究

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The surface tension and density of Cu_2S& FeS pseudo-binary system are discussed. The influence of temperature and the addition of ZnS into the matte on the surface tension and density are also examined in the paper.

本文讨论了Cu2S-FeS伪二元系的表面张力和密度，研究了温度及往冰铜中添加ZnS对体系表面张力、密度的影响。

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Study on Growth Technology and Crystal Defects in ZnS Bulk Crystal Prepared by CVD Method

用化学气相沉积（CVD）法制备硫化锌（ZnS）体块材料中晶体缺陷和生长工艺的研究

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A new method to prepare ultrafine ZnS powder by homogeneous precipitation

均匀沉淀法制备ZnS超细粉

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Cu+ possesses a strong thermo-diffusion with diffusivity of about 10-9 cm2/ s in ZnS.

Cu+在ZnS中具有很高的热扩散率，500℃时热扩散系数已达10-9cm2/s，是各种杂质中热扩散最强的杂质。

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Quantum Size Effect of CdS, ZnS Doped Nanocomposites

CdS，ZnS掺杂纳米复合材料的量子尺寸效应

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Electroluminescence is based on the semiconductor materials such as ZnS doped with Cu and Mn driven by electric field.

电致发光主要是在以ZnS等为基质的半导体材料中加入少量Cu、Mn等激活剂后在电场作用下发光。

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