1、

It is suitably selected the small temperature expansion coefficient material to take the skeleton. According to the temperature to the coil output voltage influence, the revision is carried on under the different temperature.

宜选用温度膨胀系数小的材料作为骨架,也可根据试验测出温度对线圈输出电压的影响,在不同温度下进行修正。

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2、

Influence of various factors, including microwave power, target voltage and gas pressure, on the plasma properties in diamond-like carbon ( DLC) film growth was also discussed.

研究结果表明,微波功率、靶电压和真空度等参数对等离子体特性具有重要的影响。

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3、

The Influence and Solution of Long Island Under-sea Cable Gentle Breeze Electric Field to Terminal Voltage

长岛海缆和风电场对末端电压的影响与解决方案

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4、

Because temperature is an important factor in influence of measuring accuracy, the real time accuracy testing for optical voltage transformer is important.

由于温度是影响系统测量精度的重要因素,对其进行实时性的精度检测显得尤为必要。

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5、

Voltage, temperature and ion conductivity of the ceramic are the main factors that influence the bonding process.

过渡区的氧化物形成及化合反应接合机制是形成连接的主要原因;电压、温度及材料的离子导电性是影响连接过程的主要因素。

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6、

Preliminary Analysis of the Influence on Threshold Voltage

阈值电压波动初探

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7、
8、

The paper simulates a three-phase system, analyzes influence of induction motor dynamics on voltage stability, and gives methods to improve voltage stability of induction motor nodes.

对一个三相系统模型进行仿真,分析了感应电机动态负荷特性对系统电压稳定性的影响,并给出改善电机节点电压性能的措施。

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10、

The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.

在室温条件下,研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。

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11、

The influence on threshold voltage and gate capacitance of MOSFETs due to quantum effects

量子效应对MOSFETs阈值电压和栅电容的影响

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12、

The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理,即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

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13、

The influence of target voltage and deposit rate varying with oxygen flow is discussed. The optimized oxygen flow of deposite oxide film is presented.

讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应,分析得出了沉积氧化物薄膜的最佳氧流量。

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14、

Influence of Decomposition Temperature on the Threshold Voltage for a Series of Charge Transfer Complexes

含碘系列电荷转移复合物的热分解温度对烧孔阈值电压的影响

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15、

The Influence of Thyratron Reservoir Voltage on CuBr Laser Power

闸流管氢发生器电压对CuBr激光功率的影响

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16、

Influence of dead-zone time on converter voltage spectrum and its realization via CPLD

死区时间对变流器频谱的影响及其CPLD实现

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17、

The influence factors on the separations including the buffer system, the ratio of antigen to antibody, the injection time and separation voltage were studied.

探讨了缓冲体系、癌胚抗原和抗体的配比、进样时间,进样电压等因素对分离检测的影响。

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18、

The traditional equivalent circuit of CVT ( Capacitor Voltage Transformer) neglects the influence of initial capacitor voltage value of capacitor voltage divider, but it is not neglectable in CVT transient process.

电容式电压互感器(CVT)的传统等效电路模型中忽略了电容分压器电容电压初值对等效电路模型的影响,然而在CVT暂态时这一因素的影响不能简单地看成是一个误差问题。

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19、

The influence of concentration and pH of buffer, concentration of hydrogel, applied voltage etc.

研究了缓冲溶液的浓度和pH值、水凝胶的浓度、电压等因素对分析结果的影响。

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20、

The Influence of Power Mode on the Target Voltage When Sputtering the ZnO Film by DC Pulse

用中频脉冲电源溅射ZnO薄膜时脉冲参数对溅射电压的影响

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