1、

It is pointed out that the intermodulation distortion and gain compression of SIT are mainly caused by the nonlinearity of transconductance G_m, then by those of gate-source capacitance C_ ( gs) and drain conductance G_d in order.

指出引起SIT互调失真和增益压缩的主要原因是跨导G m的非线性,其次是栅源电容C(gs)的非线性变化和漏电导G d的非线性变化的作用。

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2、

Parasitic tolerant differential SC transconductance using unity gain buffers

使用单位增益缓冲器构成的抗寄生SC跨导

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3、

The device is superior to the conventional LDMOS in the performance indexes of drive current, breakdown voltage, transconductance, gain, cut-off frequency and its process with a few additional complexities still keeps compatible with standard CMOS process flow.

该器件的驱动电流,击穿电压,跨导、增益和截止频率等性能指标明显优于传统LDMOS结构,而且工艺上仍可以与标准CMOS工艺兼容,工艺复杂度增加不大,阈值电压的设计也更加容易。

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4、

The approximate formula for influence of output transconductance on spurious free dynamic range ( SFDR) is obtained using Fourier series.

采用直流和交流量分离的方法,利用傅里叶级数,获得输出跨导对无杂波动态范围(SFDR)的影响的近似公式。

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5、

design of a high speed sige bicmos operational transconductance amplifier

运算跨导放大器的设计

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6、

A low voltage fully differential gain-boosted CMOS operational transconductance amplifier is designed.

设计了一种低电压全差动增益增强CMOS运算跨导放大器.

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7、

This incrementally changes the transconductance of the device, leading to a modulation effect.

这一效应会缓慢地改变元件的跨导, 从而导致调制效应.

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8、

Finally, the transconductance amplifier of the stimulating circuit linearly translates the voltage signal into cu.

最后 激励级 的跨导放大器将电压线性的转化为电流.

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9、

The described multiplier is basedon the variable transconductance principle.

本文叙述一种可变跨导脉冲乘法器.

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10、

The saturation extent of transconductance curves are superior to that of models reported.

跨导曲线的饱和程度优于已报导的模型.

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11、

Design of Ultra-Low-Power Operation Transconductance Amplifier Based on EKV Bulk-Driven MOSFETs

基于EKV衬底驱动MOSFETs的超低功耗运算跨导放大器设计

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