1、

Development of an Apparatus on Magnetron Sputtering Deposition, JGP 600

JGP-600型磁控溅射薄膜沉积装置的研制

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2、

Through analysis we review methods fabricating thin film cathode, including chemical acetate base solution technique, sol-gel method, laser ablation, plasma enhanced chemical vapor deposition, pulsed laser deposition, radio frequency magnetron sputtering deposition, and electrostatic spray deposition.

评论了近年来制备薄膜阴极的方法,包括化学酸基溶解法、溶胶-凝胶法、激光焙烧法、增强型等离子体化学气相淀积法、脉冲激光法、电子束喷射沉积法和射频磁控溅射法。

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3、

Chemical stability of AIN thin films prepared by reactively pulsed laser sputtering deposition

反应式脉冲激光溅射淀积AlN薄膜化学稳定性研究

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4、

The effect of laser energy density, pulsed frequency on the construction and properties of AlN thin films prepared by reactively pulsed laser sputtering deposition was discussed. And chemical stability of deposited AlN thin films has been studied in detail.

就反应式脉冲激光溅射淀积制备氮化铝(AlN)薄膜的过程,讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响,并对薄膜的化学稳定性作了比较详细的研究。

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5、

An argon ion source used for sputtering deposition has been successfully developed based on the construction of hollow cathode connecting hollow anode and the technologies of thermal cathode electron emission arc discharge, plasma magnetic confinement and ion extracting on a curving surface.

本文采用空心阴极空心阳极结构,用热阴极电子发射弧放电驱动并用磁场约束产生等离子体,用曲面发射引出离子束,研制成了氩气放电溅射离子源;

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6、

Polycrystalline Vanadium Oxides thin films deposited on Si ( 110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process.

采用离子束溅射镀膜和氧化工艺在Si(110)和石英衬底上制备了用于非致冷红外探测器阵列热敏材料的混合相氧化钒多晶薄膜。

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7、
8、

So, in this work , AlN thin films were prepared by RF magnetron sputtering deposition method.

所以本文利用射频磁控溅射方法制备AlN薄膜.

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10、

Make use of magnetron sputtering, evaporation, vacuum vapor deposition, laser etching to prepare continuous or not continuous metal films also caused most interesting of the scholar.

而利用磁控溅射、热蒸镀、电化学沉积等方法制备的连续或者非连续金属膜衬底在表面增强荧光效应中也得到了广泛的应用。

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11、

application of pulsed sputtering technology in aluminum oxide films deposition

脉冲溅射技术在氧化铝薄膜沉积中的应用

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12、

A Deposition of AlN Thin Films with Enhanced Reactively Excimer Laser Sputtering Using Gas Discharge

气体放电增强准分子激光溅射反应沉积AlN膜

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13、

Deposition rate is increase quickly with sputtering power.

结果表明溅射功率对沉积速率的影响最大,随溅射功率的增大沉积速率快速增大.

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14、

Sigmund's thermal spike sputtering model has been modified by replacing the surface energy deposition density in Sigmund's model with average energy deposition density.

对Singmund热尖峰溅射模型进行了修正.用平均能量淀积密度近似代替了Singmund热尖峰溅射模型中的表面能量淀积密度近似。

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15、

C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.

根据薄膜理论和工艺实验,采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化,获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜,与块材接近,实现了锰铜压力传感器的薄膜化。

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16、

Many processes are used to prepare transparent conductive films, such as magnetron sputtering, vacuum reactive evaporation, chemical vapor depositions, Sol-gel, laser-pulsed deposition.

多种工艺可以用来制备透明导电薄膜,如磁控溅射真空反应蒸发、化学气相沉积、溶胶-凝胶法以及脉冲激光沉积等。

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17、

ZnO films can be deposited by a variety of deposition techniques. Magnetron sputtering, metal-organic chemical vapor deposition, pulsed laser deposition, molecular beam epitaxy and reactive e-beam evaporation are main methods for the preparation of high-quality ZnO films with strong c-axis orientation.

在已开发的众多生长技术中,磁控溅射、金属有机物气相沉积、脉冲激光沉积、分子束外延、电子束反应蒸镀法是生长出高度c轴择优取向优质薄膜的主要方法。

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18、

DC Reactive Sputtering Process for Al_2O_3 Film Deposition and Its Applications

直流反应溅射Al2O3膜工艺探讨及应用

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19、

Deposition technology and properties of chromium oxide coatings by RF reactive sputtering

射频反应磁控溅射制备氧化铬薄膜技术及性能

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20、

Update the processing methods to make SOFC from solid electrolytical film are by chemical vapour deposition, electrophoretic deposition, flow stretching, sputtering, plasma sputter coating, etc.

目前,SOFC用固体电解质薄膜制备方法有电化学气相沉积法、化学气相沉积法、电泳沉积法、溅射法、等离子喷涂法等。

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