source plasma的例句大全

Single power source plasma& mig welding process

单电源等离子-MIG焊方法

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microplate modified reit ′ s method used for testing alanine aminotransferase in source plasma

微量滴定板改良赖氏试管法检测血浆丙氨酸氨基转移酶

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With these advantages, Microwave ECR plasma finds number of applications in the areas of etching technologies, thin film deposition and plasma source.

建立了ECR微波等离子体源离子输运的平板和圆柱模型，对离子历经的空间区域的输运过程进行了数值研究。

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TiN coating for inner surface modification by grid enhanced plasma source ion implantation

内表面栅极等离子体源离子注入TiN薄膜及其特性研究

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The hardness of 45 steel through surface quenching with plasma reaches about 800 HV. Thus, the method of heat treatment using plasma as heat source is practical.

45号钢经等离子体表面淬火后，硬度在800HV左右，表明采用等离子体热源对工件进行热处理是可行的。

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A Novel Pulse Plasma Light Source for CTCP Technology in Printing Industry

一种用于CTCP技术的新型脉冲等离子体光源

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The simulation results have provided useful references for these problems such as thermal cathode primary electron emission, the determination of ion beam derivation area and the effective confinement of discharge plasma in the design of ion source.

计算结果对于离子源设计中的阴极热电子发射、离子束有效引出面积确定及等离子体的有效约束等重要问题有一定参考价值。

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The advance in inductively coupled plasma mass spectrometer ( ICP-MS) was reviewed from the views of sample infeed, plasma source, mass analyzer, ion detector and auxiliaries. The application of ICP-MS in tobacco analysis was also introduced.

从进样系统、离子源、质量分析器、离子检测器和辅助系统5个方面综述了电感耦合等离子体质谱（ICP-MS）仪器的进展，并简要介绍了ICP-MS在烟草元素分析中的应用。

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An argon ion source used for sputtering deposition has been successfully developed based on the construction of hollow cathode connecting hollow anode and the technologies of thermal cathode electron emission arc discharge, plasma magnetic confinement and ion extracting on a curving surface.

本文采用空心阴极空心阳极结构，用热阴极电子发射弧放电驱动并用磁场约束产生等离子体，用曲面发射引出离子束，研制成了氩气放电溅射离子源；

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One of the two best fit models, which consists of a thermal plasma component and two absorbed power law components, indicates that the central hard X ray source must be significantly obscured and the observed spectrum is flatter than any earlier ones.

两套辐射模型均可很好拟和X谱，其一由一个热成分和两个吸收成分组成，表明中心核区必定被严重吸收、导致X谱变得平坦；

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Heat source device with plasma arc quenching is of great capacity for its high thermal efficiency and low cost.

等离子弧淬火热源装置热效率高，成本低，有巨大的发展潜力。

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Atmospheric pressure non-thermal plasma source and its application in textile processing

常压非热等离子体源及其在纺织整理中的应用

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The ablation property of hybrid C/ C composite at high temperature was investigated by the plasma torch as the thermal source.

利用等离子体火炬为高温热源，研究了混杂C/C复合材料的烧蚀性能。

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High-frequency plasma ( HFP) as a high power and pure thermal source is used for producing ultra fine powder of sub-micron ZrO 2 and nano-meter ZnO by means of heat decomposition-condensation under high temperature in gas phase.

以高频等离子体（HFP）为高能、纯净热源，采用高温离解&气相冷凝沉积新工艺制备出亚微米级ZrO2及纳米级ZnO等超细粉体材料。

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We think it is related to the fluctuations of the plasma density and the magnetic field of the source region in a small space scale.

我们认为这可能与小尺度空间内spike辐射源区的等离子体密度出现短时标的波动及磁场强度的起伏有关。

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A Nitrogen Plasma Light Source Stimulated by RF Electrodeless Field Discharge for CTCP Technology in Printing

用于CTCP技术的射频无电极放电氮气等离子体光源研究

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Fluorinated amorphous carbon films ( a C ∶ F) were deposited by microwave cyclotron resonance plasma chemical vapor deposition ( MWECR CVD) using benzene ( C 6H 6) and trifluoromethane ( CHF 3) as source gases.

用苯（C6H6）和三氟甲烷（CHF3）混合气体作源气体，采用永磁微波电子回旋共振等离子体化学气相沉积（MWECR CVD）技术，制备了氟化非晶碳膜（aC∶F）。

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Amorphous fluorinated carbon(α C ∶ F) films with F/ C ratios between 0.11 and 0.62 are prepared by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition using trifluoromethane ( CHF 3) and benzene ( C 6H 6) as source gases.

使用三氟甲烷和苯的混合气体，利用微波电子回旋共振等离子体增强化学气相沉积法制备了F/C比在011&062之间的αC∶F薄膜。

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Analysis and calculate on electroacoustic efficiency of underwater plasma sound source system

水下等离子体声源系统效率分析与计算

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The capacitively coupled plasma ( CCP) source is an important tool for etching profile of thin gate oxide with high fidelity due to an independent control of ion flux and energy.

甚高频容性耦合等离子体（CCP）是一种主要的刻蚀工具。由于其能分别控制离子通量和离子能量，通常用于高精度的薄栅极氧化层的刻蚀上。

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