1、

Multiphoton dissociation ( MPD) of tetramethylsilane and two photon resonance three photon ionization of silicon atoms are studied with parallel plate vacuum cell at violet laser radiation in the wavelength range 410~ 404nm.

在410~404nm的紫激光作用下,利用平行板电极装置研究了Si(CH3)4的多光子解离(MPD)及Si原子的双光子共振三光子电离。

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2、

Lab 1 apparatus: hot plate heater with silicon wafer ( right), connected to a temperature probe ( left).

实验一装置:加热板与矽晶圆(右)连接至感温棒(左)。

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3、
4、

The Influence of Electrode Potential on the Friction Behavior of Silicon Nitride Ball/ Brass Plate Sliding Couple

电极电势对氮化硅/黄铜滑动摩擦副摩擦磨损性能的影响研究

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5、

Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.

本文利用射频磁控溅射方法,在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。

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6、

Time compensation method is used in a compact heavy ion timing detector with a microchannel plate. The time resolution of 200 ps has been achieved using a silicon detector as a stop detector.

在由微道板构成的一种简洁的重离子定时装置中,采用了时间补偿方法减小时间分散,以半导体探测器为停止探测器时,取得了200ps的时间分辨。

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7、

Silicon micro-channel plate is a new technology, which proposed in 1990s. Based on the semiconductor process technique, the new-style continuous dynode device can perform electron multiplier.

硅微通道板是90年代以后提出的一种全新的基于半导体工艺技术而形成的图像增强器件。

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8、

In this paper, a vernier-groove plate, which is fabricated by bulk silicon micromachining technology, is presented.

本文提出了一种游标-凹槽载物片式对准机构,它由体硅微加工工艺制作。

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9、

Determination of silicon on surface of cold-rolled steel plate

冷轧钢板表面涂硅量的测定

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10、

Hot plate with silicon wafer lowered to heating position. The variation of heat of formation and O-H bond lengths with the adsorption distance have been calculated. The results show that there are two active adsorption site on the model zeolite.

加热板与矽晶圆降低至加热位置。通过模拟计算确定了两个低能吸附位点及相应的吸附热,结果与实验值非常接近。

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11、

lithography process is one of the most important semiconductor manufacturing process steps, it is used to copy mask plate pattern on the silicon wafer for next lithography step.

光刻工艺是半导体制造中最为重要的工艺步骤之一,其作用是将掩膜板上的图形复制到硅片上,为下一步工序做好准备。

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12、

Hot plate with silicon wafer in initial configuration ( before heating ).

加热板与矽晶圆在启始状态 ( 加热前 ).

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13、

Hot plate with silicon wafer lowered to heating position.

加热板与矽晶圆降低至加热位置.

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14、

For the unmodified eutectic silicon, the large cooling rate can promote the transition of eutectic silicon from a coarse plate to a fibrous structure, resulting in modification.

即使对于未变质合金,大的冷却速度仍可以实现共晶硅由粗大的片层状向纤维状分枝结构转变,产生变质作用。

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15、

The modification effect of K, Na and Sr modifiers is obviously decreased by TiB 2 and B.The morphology of eutectic silicon in composite is coarse plate.

ZL101/TiB2复合材料中K、Na、Sr变质剂变质效果差与复合材料中的TiB2和B有关。复合材料中Si相呈板片状。

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16、

nickel-iron-chromium-silicon alloys plate, sheet and strip

镍铁铬硅合金板、薄板及带材

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17、

used in india to protect silicon hot pad to extend its service life, but also protect the heating plate clean, essential goods.

用于印烫时保护硅垫、延长其使用寿命,也是保护发热板干净的必备品。

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18、

the article introduces the general condition and energy saving effect of amorphous alloy transformer which compares to traditional silicon-steel plate transformer could reduce 70%~ 80% open circuit losses.

文章介绍了非晶合金变压器的概况及其节能效果,指出它比传统的硅钢片变压器可降低70%~80%的空载损耗。

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19、

On the printing plate are processed by besidesyour silicon of protective film.

在差印版举行办理后,须不兴去硅胶层上的爱护膜.

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20、

Microstructure and precipitate of low temperature hot rolled HGO silicon steel plate by normalizing

低温热轧高磁感取向硅钢板常化组织及析出相研究

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